Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Each transistor offers a drain-source voltage rating of -20 V, a gate-source voltage rating of ±12 V, and a continuous drain current of -3 A at 25°C. The drain-source on-state resistance is 66 to 79 mΩ at -4.5 V gate-source voltage and 25°C junction temperature. The device provides 2 kV ESD protection (HBM) and operates with a junction temperature range of -55°C to 150°C. Thermal resistance from junction to ambient is 90 to 104 K/W on a PCB with a 6 cm² drain pad. The part is not qualified for automotive use.
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET 2P-CH 20V 3A 6HUSON Product overview: PMDPB70XPE,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-PMDPB70XPE,115 can be used for catalog matching and distributor lookup.
Mosfet Array 2 P-Channel (Dual) 20V 3A 515mW Surface Mount 6-HUSON (2x2)
Mosfet Array 2 P-Channel (Dual) 20V 3A 515mW Surface Mount 6-HUSON (2x2)
Mosfet Array 2 P-Channel (Dual) 20V 3A 515mW Surface Mount 6-HUSON (2x2)
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089514-PMDPB70XPE,1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DFN2020-6
Maximum Power Dissipation: 515mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3A
Gate-Source Threshold Voltage: 1.25V @ 250μA
Max Gate Charge: 7.5nC @ 4.5V
Max Input Capacitance: 600pF @ 10V
Maximum Rds On at Id,Vgs: 79 mOhm @ 2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
MOSFET Transistor, Dual P Channel, -4.2 A, -20 V, 0.066 ohm, -4.5 V, -1 V RoHS Compliant: Yes
MOSFET 2P-CH 20V 3A 6HUSON
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMDPB70XPE,115 | 289-PMDPB70XPE,115 | 1727-PMDPB70XPE,115TR-ND | 1089514-PMDPB70XPE,115 | 84W8055 | PMDPB70XPE,115 |
| Product Name | 20 V dual P-channel Trench MOSFET | 20V 3A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB70XPE,115 | Mosfet Transistor, Dual P Channel, -4.2 A, -20 V, 0.066 Ohm, -4.5 V, -1 V Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||
| Package Type | SOT1118 SOT1118 | Tape & Reel (TR) | 6-UFDFN Exposed Pad | SOT3; DFN2020-6 | TO-3 | |
| Polarity | P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 20 volts | 20 volts |
