Nexperia B.V. 20 V, complementary N/P-channel Trench MOSFET PMCXB290UEZ

Description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection typically > 2 kV HBM Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables
  • 20 V, complementary N/P-channel Trench MOSFET - PMCXB290UEZ - Nexperia B.V.
    Nexperia B.V.
  • FET, MOSFET Arrays - 1727-PMCXB290UEZTR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMCXB290UEZDKR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMCXB290UEZCT-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection typically > 2 kV HBM Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables
Request a Quote Datasheet

Suppliers

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20 V, complementary N/P-channel Trench MOSFET - PMCXB290UEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, complementary N/P-channel Trench MOSFET
PMCXB290UEZ
20 V, complementary N/P-channel Trench MOSFET PMCXB290UEZ
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection typically > 2 kV HBM Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection typically > 2 kV HBM

Applications

  • Relay driver
  • High-speed line driver
  • Level shifter
  • Power management in battery-driven portables
Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-PMCXB290UEZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMCXB290UEZTR-ND
FET, MOSFET Arrays 1727-PMCXB290UEZTR-ND
MOSFET N/P-CH 20V 0.93A 6DFN

MOSFET N/P-CH 20V 0.93A 6DFN

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMCXB290UEZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMCXB290UEZDKR-ND
FET, MOSFET Arrays 1727-PMCXB290UEZDKR-ND
MOSFET N/P-CH 20V 0.93A 6DFN

MOSFET N/P-CH 20V 0.93A 6DFN

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMCXB290UEZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMCXB290UEZCT-ND
FET, MOSFET Arrays 1727-PMCXB290UEZCT-ND
MOSFET N/P-CH 20V 0.93A 6DFN

MOSFET N/P-CH 20V 0.93A 6DFN

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMCXB290UEZ 1727-PMCXB290UEZTR-ND
Product Name 20 V, complementary N/P-channel Trench MOSFET FET, MOSFET Arrays
Polarity N-Channel; P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts
IDSS 3500 milliamps
VGS(off) 0.7000 volts
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