PNP high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted power plastic package, rated for a collector-emitter voltage of -100 V and a continuous collector current of -3 A. The device supports a peak collector current of -8 A for pulses up to 1 ms and has a collector-emitter saturation resistance of 110 to 180 mΩ under specified test conditions. It is qualified to AEC-Q101 and rated for junction temperatures up to 175 °C, with an ambient temperature range of -55 °C to 175 °C. Power dissipation reaches up to 25 W when mounted directly to the base. The part is suitable for automotive applications, power management, load switching, linear voltage regulation, and backlighting. The NPN complement is PHPT61003NY-Q.
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN complement: PHPT61003NY-Q
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Power Bipolar Transistors |
| Product Number | PHPT61003PY-QX |
| Product Name | 100 V, 3A PNP high power bipolar transistor |
| VCEO | -100 volts |
