NPN high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted power plastic package. Collector-emitter voltage is 100 V, continuous collector current is 6 A, and peak collector current is 12 A for single pulses up to 1 ms. Collector-emitter saturation resistance is 35 to 57 mΩ at 6 A collector current and 600 mA base current. Junction temperature rating is 175 °C. Qualified to AEC-Q101 for automotive applications.
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT61006PY-Q
Features and benefits
Applications
Bipolar Transistors - BJT SOT669/LFPAK NPN BIPOLAR TRANS Product overview: PHPT61006NY-QX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-PHPT61006NY-QX can be used for catalog matching and distributor lookup.
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Power Bipolar Transistors | Bipolar RF Transistors |
| Product Number | PHPT61006NY-QX | 2087-PHPT61006NY-QX |
| Product Name | 100 V, 6 A NPN high power bipolar transistor | Bipolar Transistor |
| VCEO | 100 volts | |
| IC(max) | 6 milliamps | 6000 milliamps |
| PD | 1.3 milliwatts | 25 milliwatts |
| TJ | 175 C (347 F) |
