Nexperia B.V. 20 V, dual P-channel Trench MOSFET PMDPB55XPAX

Description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction AEC-Q101 qualified Applications DC to DC conversion High-speed line driver High-side load switch Switching circuits
  • 20 V, dual P-channel Trench MOSFET - PMDPB55XPAX - Nexperia B.V.
    Nexperia B.V.
  • FET, MOSFET Arrays - 1727-PMDPB55XPAXCT-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMDPB55XPAXDKR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMDPB55XPAXTR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction AEC-Q101 qualified Applications DC to DC conversion High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, dual P-channel Trench MOSFET - PMDPB55XPAX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, dual P-channel Trench MOSFET
PMDPB55XPAX
20 V, dual P-channel Trench MOSFET PMDPB55XPAX
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction AEC-Q101 qualified Applications DC to DC conversion High-speed line driver High-side load switch Switching circuits

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Exposed drain pad for excellent thermal conduction
  • AEC-Q101 qualified

Applications

  • DC to DC conversion
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-PMDPB55XPAXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDPB55XPAXCT-ND
FET, MOSFET Arrays 1727-PMDPB55XPAXCT-ND
MOSFET 2P-CH 20V 3.6A 6HUSON

MOSFET 2P-CH 20V 3.6A 6HUSON

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMDPB55XPAXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDPB55XPAXDKR-ND
FET, MOSFET Arrays 1727-PMDPB55XPAXDKR-ND
MOSFET 2P-CH 20V 3.6A 6HUSON

MOSFET 2P-CH 20V 3.6A 6HUSON

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMDPB55XPAXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDPB55XPAXTR-ND
FET, MOSFET Arrays 1727-PMDPB55XPAXTR-ND
MOSFET 2P-CH 20V 3.6A 6HUSON

MOSFET 2P-CH 20V 3.6A 6HUSON

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMDPB55XPAX 1727-PMDPB55XPAXCT-ND
Product Name 20 V, dual P-channel Trench MOSFET FET, MOSFET Arrays
Polarity P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts
IDSS -9300 milliamps
VGS(off) -0.6500 volts
Unlock Full Specs
to access all available technical data