Nexperia B.V. 30 V, complementary N/P-channel Trench MOSFET PMCXB1000UEZ

Description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.7 V Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables
  • 30 V, complementary N/P-channel Trench MOSFET - PMCXB1000UEZ - Nexperia B.V.
    Nexperia B.V.
  • FET, MOSFET Arrays - 1727-2737-6-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-2737-2-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-2737-1-ND - DigiKey
    DigiKey
  • PMCXB1000UEZ - Rochester Electronics
    Rochester Electronics
Request a Quote Datasheet
Description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.7 V Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, complementary N/P-channel Trench MOSFET - PMCXB1000UEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, complementary N/P-channel Trench MOSFET
PMCXB1000UEZ
30 V, complementary N/P-channel Trench MOSFET PMCXB1000UEZ
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.7 V Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Very low threshold voltage for portable applications: VGS(th) = 0.7 V
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Relay driver
  • High-speed line driver
  • Level shifter
  • Power management in battery-driven portables
Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-2737-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-2737-6-ND
FET, MOSFET Arrays 1727-2737-6-ND
Mosfet Array N and P-Channel Complementary 30V 590mA (Ta), 410mA (Ta) 285mW (Ta) Surface Mount DFN1010B-6

Mosfet Array N and P-Channel Complementary 30V 590mA (Ta), 410mA (Ta) 285mW (Ta) Surface Mount DFN1010B-6

Buy Now Datasheet
FET, MOSFET Arrays - 1727-2737-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-2737-2-ND
FET, MOSFET Arrays 1727-2737-2-ND
Mosfet Array N and P-Channel Complementary 30V 590mA (Ta), 410mA (Ta) 285mW (Ta) Surface Mount DFN1010B-6

Mosfet Array N and P-Channel Complementary 30V 590mA (Ta), 410mA (Ta) 285mW (Ta) Surface Mount DFN1010B-6

Buy Now Datasheet
FET, MOSFET Arrays - 1727-2737-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-2737-1-ND
FET, MOSFET Arrays 1727-2737-1-ND
Mosfet Array N and P-Channel Complementary 30V 590mA (Ta), 410mA (Ta) 285mW (Ta) Surface Mount DFN1010B-6

Mosfet Array N and P-Channel Complementary 30V 590mA (Ta), 410mA (Ta) 285mW (Ta) Surface Mount DFN1010B-6

Buy Now Datasheet
- PMCXB1000UEZ - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PMCXB1000UEZ
PMCXB1000UEZ
PMCXB1000UE - 30 V, complementary N/P-channel Trench MOSFET

PMCXB1000UE - 30 V, complementary N/P-channel Trench MOSFET

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMCXB1000UEZ
MOSFET PMCXB1000UEZ
MOSFET PMCXB1000UE/DFN1010B -6/REEL 7

MOSFET PMCXB1000UE/DFN1010B-6/REEL 7

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Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMCXB1000UEZ 1727-2737-6-ND PMCXB1000UEZ PMCXB1000UEZ
Product Name 30 V, complementary N/P-channel Trench MOSFET FET, MOSFET Arrays MOSFET
Polarity N-Channel; P-Channel P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 590 milliamps
VGS(off) 0.7000 volts
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