N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology.
Features and benefits
Applications
SMALL SIGNAL MOSFET FOR MOBILE
SMALL SIGNAL MOSFET FOR MOBILE
SMALL SIGNAL MOSFET FOR MOBILE
SMALL SIGNAL MOSFET FOR MOBILE
SMALL SIGNAL MOSFET FOR MOBILE
MOSFET, N-CH, 11V, 14A, DSN1010 ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Acme Chip Technology Co., Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMCA14UNYL | 1727-PMCA14UNYLTR-ND | PMCA14UNYL | PMCA14UNYL | 84AH8275 |
| Product Name | 12 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 11V, 14A, Dsn1010 Rohs Compliant Nexperia |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 12 volts | 12 volts | |||
| IDSS | 14000 milliamps | 11000 milliamps | |||
| VGS(off) | 0.6000 volts |