N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology.
Features and benefits
Applications
SMALL SIGNAL MOSFET FOR MOBILE
SMALL SIGNAL MOSFET FOR MOBILE
SMALL SIGNAL MOSFET FOR MOBILE
SMALL SIGNAL MOSFET FOR MOBILE
SMALL SIGNAL MOSFET FOR MOBILE
MOSFET, N-CH, 11V, 14A, DSN1010 ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | ODG (Origin Data Global) | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMCA14UNYL | 1727-PMCA14UNYLTR-ND | PMCA14UNYL | PMCA14UNYL | 84AH8275 |
| Product Name | 12 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 11V, 14A, Dsn1010 Rohs Compliant Nexperia |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 12 volts | 12 volts | |||
| IDSS | 14000 milliamps | 11000 milliamps | |||
| VGS(off) | 0.6000 volts |