Dual extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089678-PMGD290XN,11
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSSOP
Maximum Power Dissipation: 410mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 860mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.72nC @ 4.5V
Max Input Capacitance: 34pF @ 20V
Maximum Rds On at Id,Vgs: 350 mOhm @ 200mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Portable Devices, Power Management
MOSFET Dual N-Channel 20V 0.86A SOT363
MOSFET Dual N-Channel 20V 0.86A SOT363
MOSFET Dual N-Channel 20V 0.86A SOT363
Mosfet Array 2 N-Channel (Dual) 20V 860mA 410mW Surface Mount 6-TSSOP
Mosfet Array 2 N-Channel (Dual) 20V 860mA 410mW Surface Mount 6-TSSOP
Mosfet Array 2 N-Channel (Dual) 20V 860mA 410mW Surface Mount 6-TSSOP
MOSFET 2N-CH 20V 0.86A 6TSSOP
MOSFET, N-CH, 20V, 0.86, 150DEG C, 0.41W; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:860mA; On Resistance Rds(on):0.29ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
| Nexperia B.V. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMGD290XN,115 | 1089678-PMGD290XN,115 | 7258394 | 7258394P | 1727-3126-1-ND | PMGD290XN,115 | 34R4572 |
| Product Name | Dual N-channel TrenchMOS extremely low level FET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMGD290XN,115 | MOSFETs | MOSFETs | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20V, 0.86, 150Deg C, 0.41W; Transistor Polarity Nexperia |
| Package Type | SOT363 | SOT3; 6-TSSOP | Sot-363 (sc-88) | SC-88 | 6-TSSOP, SC-88, SOT-363 | TO-3 | |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 20 volts | ||||||
| PD | 410 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) |
