Nexperia B.V. 20 V, dual P-channel Trench MOSFET PMDXB950UPELZ

Description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω Applications Relay driver High-speed line driver High-side load switch Switching circuits
  • 20 V, dual P-channel Trench MOSFET - PMDXB950UPELZ - Nexperia B.V.
    Nexperia B.V.
  • MOSFETs - 1527150 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1528344 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1528344P - RS Components, Ltd.
    RS Components, Ltd.
  • FET, MOSFET Arrays - 1727-2601-2-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-2601-6-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-2601-1-ND - DigiKey
    DigiKey
  • Mosfet, Dual P-Ch, -20V, -0.5A, Dfn1010B; Transistor Polarity Nexperia - 02AC3825 - Newark, An Avnet Company
    Newark, An Avnet Company
  • FET, MOSFET Arrays - PMDXB950UPELZ - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMDXB950UPELZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω Applications Relay driver High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, dual P-channel Trench MOSFET - PMDXB950UPELZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, dual P-channel Trench MOSFET
PMDXB950UPELZ
20 V, dual P-channel Trench MOSFET PMDXB950UPELZ
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω Applications Relay driver High-speed line driver High-side load switch Switching circuits

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
  • Exposed drain pad for excellent thermal conduction
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM
  • Drain-source on-state resistance RDSon = 1.02 Ω

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
MOSFETs - 1527150 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1527150
MOSFETs 1527150
MOSFET Dual P-Ch 20V 500mA DFN1010B

MOSFET Dual P-Ch 20V 500mA DFN1010B

Supplier's Site
MOSFETs - 1528344 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1528344
MOSFETs 1528344
MOSFET Dual P-Ch 20V 500mA DFN1010B

MOSFET Dual P-Ch 20V 500mA DFN1010B

Supplier's Site
MOSFETs - 1528344P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1528344P
MOSFETs 1528344P
MOSFET Dual P-Ch 20V 500mA DFN1010B

MOSFET Dual P-Ch 20V 500mA DFN1010B

Supplier's Site
FET, MOSFET Arrays - 1727-2601-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-2601-2-ND
FET, MOSFET Arrays 1727-2601-2-ND
Mosfet Array 2 P-Channel (Dual) 20V 500mA 380mW Surface Mount DFN1010B-6

Mosfet Array 2 P-Channel (Dual) 20V 500mA 380mW Surface Mount DFN1010B-6

Buy Now Datasheet
FET, MOSFET Arrays - 1727-2601-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-2601-6-ND
FET, MOSFET Arrays 1727-2601-6-ND
Mosfet Array 2 P-Channel (Dual) 20V 500mA 380mW Surface Mount DFN1010B-6

Mosfet Array 2 P-Channel (Dual) 20V 500mA 380mW Surface Mount DFN1010B-6

Buy Now Datasheet
FET, MOSFET Arrays - 1727-2601-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-2601-1-ND
FET, MOSFET Arrays 1727-2601-1-ND
Mosfet Array 2 P-Channel (Dual) 20V 500mA 380mW Surface Mount DFN1010B-6

Mosfet Array 2 P-Channel (Dual) 20V 500mA 380mW Surface Mount DFN1010B-6

Buy Now Datasheet
Mosfet, Dual P-Ch, -20V, -0.5A, Dfn1010B; Transistor Polarity Nexperia - 02AC3825 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual P-Ch, -20V, -0.5A, Dfn1010B; Transistor Polarity Nexperia
02AC3825
Mosfet, Dual P-Ch, -20V, -0.5A, Dfn1010B; Transistor Polarity Nexperia 02AC3825
MOSFET, DUAL P-CH, -20V, -0.5A, DFN1010B; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-500mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):1.02ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage RoHS Compliant: Yes

MOSFET, DUAL P-CH, -20V, -0.5A, DFN1010B; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-500mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):1.02ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage RoHS Compliant: Yes

Supplier's Site Datasheet
FET, MOSFET Arrays - PMDXB950UPELZ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
PMDXB950UPELZ
FET, MOSFET Arrays PMDXB950UPELZ
20 V, DUAL P-CHANNEL TRENCH MOSF

20 V, DUAL P-CHANNEL TRENCH MOSF

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMDXB950UPELZ
MOSFET PMDXB950UPELZ
MOSFET PMDXB950UPEL/DFN1010 B-6/REEL 7

MOSFET PMDXB950UPEL/DFN1010B-6/REEL 7

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMDXB950UPELZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMDXB950UPELZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMDXB950UPELZ
MOSFET 2P-CH 20V 0.5A 6DFN

MOSFET 2P-CH 20V 0.5A 6DFN

Supplier's Site

Technical Specifications

  Nexperia B.V. RS Components, Ltd. RS Components, Ltd. DigiKey Newark, An Avnet Company ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMDXB950UPELZ 1527150 1528344P 1727-2601-2-ND 02AC3825 PMDXB950UPELZ PMDXB950UPELZ PMDXB950UPELZ
Product Name 20 V, dual P-channel Trench MOSFET MOSFETs MOSFETs FET, MOSFET Arrays Mosfet, Dual P-Ch, -20V, -0.5A, Dfn1010B; Transistor Polarity Nexperia FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS -20 volts 20 volts
IDSS -500000 milliamps -500 milliamps 500 milliamps
VGS(off) 8 volts
PD 265 milliwatts
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