Nexperia B.V. 20 V, dual N-channel Trench MOSFET PMDPB30XNZ

Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Applications Relay driver LED backlight driver Low-side loadswitch Switching circuits
  • 20 V, dual N-channel Trench MOSFET - PMDPB30XNZ - Nexperia B.V.
    Nexperia B.V.
  • FET, MOSFET Arrays - 1727-PMDPB30XNZTR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMDPB30XNZDKR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMDPB30XNZCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMDPB30XNZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Applications Relay driver LED backlight driver Low-side loadswitch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, dual N-channel Trench MOSFET - PMDPB30XNZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, dual N-channel Trench MOSFET
PMDPB30XNZ
20 V, dual N-channel Trench MOSFET PMDPB30XNZ
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Applications Relay driver LED backlight driver Low-side loadswitch Switching circuits

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Very fast switching
  • Trench MOSFET technology
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Exposed drain pad for excellent thermal conduction

Applications

  • Relay driver
  • LED backlight driver
  • Low-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-PMDPB30XNZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDPB30XNZTR-ND
FET, MOSFET Arrays 1727-PMDPB30XNZTR-ND
Mosfet Array 2 N-Channel (Dual) 20V 4A (Ta) 490mW (Ta), 8.33W (Tc) Surface Mount 6-HUSON (2x2)

Mosfet Array 2 N-Channel (Dual) 20V 4A (Ta) 490mW (Ta), 8.33W (Tc) Surface Mount 6-HUSON (2x2)

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMDPB30XNZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDPB30XNZDKR-ND
FET, MOSFET Arrays 1727-PMDPB30XNZDKR-ND
MOSFET 2N-CH 20V 4A 6HUSON

MOSFET 2N-CH 20V 4A 6HUSON

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMDPB30XNZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDPB30XNZCT-ND
FET, MOSFET Arrays 1727-PMDPB30XNZCT-ND
MOSFET 2N-CH 20V 4A 6HUSON

MOSFET 2N-CH 20V 4A 6HUSON

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMDPB30XNZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMDPB30XNZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMDPB30XNZ
MOSFET 2N-CH 20V 4A 6HUSON

MOSFET 2N-CH 20V 4A 6HUSON

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number PMDPB30XNZ 1727-PMDPB30XNZTR-ND PMDPB30XNZ
Product Name 20 V, dual N-channel Trench MOSFET FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts
IDSS 5300 milliamps
VGS(off) 12 volts
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