PNP high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted plastic package, rated for a collector-emitter voltage of -60 V and a continuous collector current of -10 A, with a peak pulsed collector current of -20 A. The device supports a maximum junction temperature of 175 °C and offers high thermal dissipation capability. It is qualified to AEC-Q101 and suitable for automotive applications. Collector-emitter saturation resistance is 29 to 47 mΩ at -10 A collector current and -1 A base current, under pulsed conditions at 25 °C ambient.
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN complement: PHPT60610NY-Q
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Power Bipolar Transistors |
| Product Number | PHPT60610PY-QX |
| Product Name | 60 V, 10 A PNP high power bipolar transistor |
| VCEO | -60 volts |
