Nexperia B.V. 20 V, P-channel Trench MOSFET PMCM6501UPEZ

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 x 1.48 x 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side loadswitch Switching circuits
  • 20 V, P-channel Trench MOSFET - PMCM6501UPEZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - PMCM6501UPEZ - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 1727-7627-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-7627-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-7627-6-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMCM6501UPEZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 x 1.48 x 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side loadswitch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - PMCM6501UPEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
PMCM6501UPEZ
20 V, P-channel Trench MOSFET PMCM6501UPEZ
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 x 1.48 x 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side loadswitch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Ultra small package: 0.98 x 1.48 x 0.35 mm
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Battery switch
  • High-speed line driver
  • High-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - PMCM6501UPEZ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMCM6501UPEZ
Single FETs, MOSFETs PMCM6501UPEZ
MOSFET P-CH 20V 6WLCSP

MOSFET P-CH 20V 6WLCSP

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-7627-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7627-1-ND
Single FETs, MOSFETs 1727-7627-1-ND
P-Channel 20V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)

P-Channel 20V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-7627-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7627-2-ND
Single FETs, MOSFETs 1727-7627-2-ND
P-Channel 20V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)

P-Channel 20V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-7627-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7627-6-ND
Single FETs, MOSFETs 1727-7627-6-ND
P-Channel 20V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)

P-Channel 20V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMCM6501UPEZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMCM6501UPEZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMCM6501UPEZ
MOSFET P-CH 20V 6WLCSP

MOSFET P-CH 20V 6WLCSP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMCM6501UPEZ
MOSFET PMCM6501UPEZ
MOSFET MOS Discretes WLCSP

MOSFET MOS Discretes WLCSP

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMCM6501UPEZ PMCM6501UPEZ 1727-7627-1-ND PMCM6501UPEZ PMCM6501UPEZ
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts 20 volts
IDSS -7300 milliamps 7300 milliamps
VGS(off) -0.6000 volts
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