P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. The package measures 0.98 x 1.48 x 0.35 mm. It has a drain-source voltage rating of -20 V, a gate-source voltage range of -8 to 8 V, and a continuous drain current of -7.3 A at -4.5 V gate-source voltage and 25 °C junction temperature. The on-state resistance is 22 to 30 mΩ at -4.5 V gate-source voltage and -3 A drain current. ElectroStatic Discharge (ESD) protection exceeds 2 kV HBM. Applications include battery switch, high-speed line driver, high-side loadswitch, and switching circuits.
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 20V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)
P-Channel 20V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)
P-Channel 20V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)
MOSFET P-CH 20V 6WLCSP
MOSFET P-CH 20V 6WLCSP
| Nexperia B.V. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMCM6501UPEZ | 1727-7627-1-ND | PMCM6501UPEZ | PMCM6501UPEZ | PMCM6501UPEZ |
| Product Name | 20 V, P-channel Trench MOSFET | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | -20 volts | 20 volts | |||
| IDSS | -7300 milliamps | 7300 milliamps | |||
| VGS(off) | 8 volts | ||||
| PD | 556 milliwatts | 556 milliwatts |
