Nexperia B.V. 20 V, P-channel Trench MOSFET PMCM6501UPEZ

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 x 1.48 x 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side loadswitch Switching circuits
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Description
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 x 1.48 x 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side loadswitch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - PMCM6501UPEZ - Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
PMCM6501UPEZ
20 V, P-channel Trench MOSFET PMCM6501UPEZ
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 x 1.48 x 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side loadswitch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Ultra small package: 0.98 x 1.48 x 0.35 mm
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Battery switch
  • High-speed line driver
  • High-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-7627-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7627-1-ND
Single FETs, MOSFETs 1727-7627-1-ND
P-Channel 20V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)

P-Channel 20V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-7627-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7627-2-ND
Single FETs, MOSFETs 1727-7627-2-ND
P-Channel 20V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)

P-Channel 20V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-7627-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7627-6-ND
Single FETs, MOSFETs 1727-7627-6-ND
P-Channel 20V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)

P-Channel 20V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)

Buy Now Datasheet
Single FETs, MOSFETs - PMCM6501UPEZ - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMCM6501UPEZ
Single FETs, MOSFETs PMCM6501UPEZ
MOSFET P-CH 20V 6WLCSP

MOSFET P-CH 20V 6WLCSP

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOS Discretes WLCSP

MOSFET MOS Discretes WLCSP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMCM6501UPEZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMCM6501UPEZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMCM6501UPEZ
MOSFET P-CH 20V 6WLCSP

MOSFET P-CH 20V 6WLCSP

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMCM6501UPEZ 1727-7627-1-ND PMCM6501UPEZ PMCM6501UPEZ PMCM6501UPEZ
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts 20 volts
IDSS -7300 milliamps 7300 milliamps
VGS(off) -0.6000 volts
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