Nexperia B.V. 20 V, P-channel Trench MOSFET PMN30XPEX

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Enhanced power dissipation capability of 1390 mW Applications Relay driver High-speed line driver High-side load switch Switching circuits
  • 20 V, P-channel Trench MOSFET - PMN30XPEX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMN30XPEXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMN30XPEXTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMN30XPEXDKR-ND - DigiKey
    DigiKey
  • PMN30XPEX - Rochester Electronics
    Rochester Electronics
  • Mosfet, P-Ch, -20V, -5.3A, 0.56W; Transistor Polarity Nexperia - 17AH9239 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMN30XPEX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Enhanced power dissipation capability of 1390 mW Applications Relay driver High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - PMN30XPEX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
PMN30XPEX
20 V, P-channel Trench MOSFET PMN30XPEX
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Enhanced power dissipation capability of 1390 mW Applications Relay driver High-speed line driver High-side load switch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM
  • Enhanced power dissipation capability of 1390 mW

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMN30XPEXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMN30XPEXCT-ND
Single FETs, MOSFETs 1727-PMN30XPEXCT-ND
MOSFET P-CH 20V 5.3A 6TSOP

MOSFET P-CH 20V 5.3A 6TSOP

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMN30XPEXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMN30XPEXTR-ND
Single FETs, MOSFETs 1727-PMN30XPEXTR-ND
P-Channel 20V 5.3A (Ta) 560mW (Ta), 6.25W (Tc) Surface Mount 6-TSOP

P-Channel 20V 5.3A (Ta) 560mW (Ta), 6.25W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMN30XPEXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMN30XPEXDKR-ND
Single FETs, MOSFETs 1727-PMN30XPEXDKR-ND
MOSFET P-CH 20V 5.3A 6TSOP

MOSFET P-CH 20V 5.3A 6TSOP

Buy Now Datasheet
- PMN30XPEX - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PMN30XPEX
PMN30XPEX
PMN30XPE - 20V, P-channel Trench MOSFET

PMN30XPE - 20V, P-channel Trench MOSFET

Supplier's Site Datasheet
Mosfet, P-Ch, -20V, -5.3A, 0.56W; Transistor Polarity Nexperia - 17AH9239 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -20V, -5.3A, 0.56W; Transistor Polarity Nexperia
17AH9239
Mosfet, P-Ch, -20V, -5.3A, 0.56W; Transistor Polarity Nexperia 17AH9239
MOSFET, P-CH, -20V, -5.3A, 0.56W; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes

MOSFET, P-CH, -20V, -5.3A, 0.56W; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMN30XPEX
MOSFET PMN30XPEX
MOSFET PMN30XPE/SOT457/SC-7 4

MOSFET PMN30XPE/SOT457/SC-74

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMN30XPEX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMN30XPEX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMN30XPEX
MOSFET P-CH 20V 5.3A 6TSOP

MOSFET P-CH 20V 5.3A 6TSOP

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMN30XPEX 1727-PMN30XPEXCT-ND PMN30XPEX 17AH9239 PMN30XPEX PMN30XPEX
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs Mosfet, P-Ch, -20V, -5.3A, 0.56W; Transistor Polarity Nexperia MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts
IDSS -7000 milliamps -5300 milliamps
VGS(off) 12 volts
PD 560 milliwatts
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