Nexperia B.V. 20 V, P-channel Trench MOSFET PMN30XPEX

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) surface-mounted plastic package using Trench MOSFET technology. It has a drain-source voltage rating of -20 V, a continuous drain current of -5.3 A at -4.5 V gate-source voltage and 25 °C junction temperature, and a maximum drain-source on-state resistance of 34 mΩ at -4.5 V gate-source voltage. The device supports peak drain current up to -21 A and has an ESD protection level greater than 2 kV HBM. Power dissipation is rated at 560 mW on a standard footprint and 1.4 W with a 6 cm² drain pad. Thermal resistance from junction to ambient is 78-90 K/W with improved heat dissipation, and junction temperature operates from -55 °C to 150 °C. It meets IEC 60134 absolute maximum ratings and is not qualified for automotive use.