Richardson RFPD Datasheets for RF Switches
RF switches route radio frequency signals to particular waveguides.
RF Switches: Learn more
| Product Name | Notes |
|---|---|
| 20 W HMIC Silicon PIN Diode Terminated SPDT Switch 8.0-10.5 GHz. The MASW-010647 is a monolithic, terminated Silicon PIN diode SPDT switch designed for X-Band high power, high performance applications. | |
| GaAs SP3T/SPDT DC-6.0 GHz (Optimized for 2.4/5.8 GHz operation). The MASW-011043 is an integrated MMIC design which includes a SPDT switch and a SP3T switch. This part would typically be... | |
| GaAs SPDT Switch, DC-20 GHz. The MASW-008322 is a versatile, broadband, high isolation SPDT switch offered in a lead-free 4 mm 24-lead PQFN surface mount plastic package. The design incorporates... | |
| GRF6011 is linear, ultra-low loss SPDT switch that has been designed with failsafe characteristics when all volt-age inputs are removed. In switching mode, the device delivers IP1dB levels greater than... | |
| HMIC™ PIN Diode SPDT 80 Watt Switch for 0.01 - 4.0 GHz Higher Power Applications. The MASW000932 is a SPDT high power, broadband, high linearity, PIN diode T/R switch for... | |
| HMIC™ Silicon PIN Diode SP3T Switch. The MASW-003103-1364 is a Surmount™ broadband monolithic SP3T switch using series and shunt connected silicon PIN diodes. This part is designed for use as... | |
| HS8727 is a SOI CMOS MMIC single pole two throw (SP2T)high power switch in a low cost miniature 1.1 mm x 0.7 mm x0.38 mm DFN6L package. The HS8727 is... | |
| HS8741-21 is a SOI CMOS MMIC single pole four throw(SP4T) high power switch in a low cost miniature 1.1 x 1.1 x0.54 mm LGA package. The HS8741-21 is ideally suited... | |
| Ka-Band High Power Terminated SPDT PIN Switch, 26-40 GHz. The MASW-011036 is a high power SPDT with 50 Ω terminated RF ports. This broadband, high linearity, SPDT switch was developed... | |
| M/A-COM Tech’s MA4AGSW1 is an Aluminum-Gallium-Ars enide, single pole, single throw (SPST), PIN diode switch. The switch features enhanced Al-GaAs anodes which are formed using M/A-COM Tech’s patented hetero-junction technology. | |
| M/A-COM’s MASWSS0103 is a GaAs PHEMT MMIC single pole double throw (SPDT) switch in a lead-free 4 mm 20-lead PQFN package. The MASWSS0103 is ideally suited for applications where low... | |
| M/A/COM's MASW4030G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and... | |
| M/A/COM's MASW6020G is a GaAs MMIC SPST switch die. The MASW6020G is ideally used where low power consumption is required. Typical applications include transmit / receive switching, switch matrices and... | |
| MA-COM's MASW-000822-12770T is a Broadband, high linearity, common anode PIN diode SPDT switch in a lead-free 3 mm 16-lead PQFN package. The MASW-00822-1277OT is ideally suited for 0.05 - 6.0... | |
| MA-COM's MASW-004103-1365 is a Surmount™ broadband monolithic SP4T switch using series and shunt connected silicon PIN diodes. This part is designed for use as a moderate signal, high performance switch... | |
| MA/COM's MASW6030G is a GaAs MMIC DPDT switch die. The MASW6030G is ideally used where low power consumption is required. Typical applications include transmit / receive switching, switch matrices and... | |
| MA8334 Series of Multi-Throw High Power Switch Modules are SPDT and SP3T Devices designed for usage from 10 MHz to 1000 MHz. They are rated to operate at 100 Watts... | |
| MACOM's MA4AGSW1A is an Aluminum-Gallium Arsenide anode enhanced, SPST Non-Reflective PIN diode switch. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, produce less loss than conventional GaAs processes, by... | |
| MACOM's MA4AGSW3 is an Aluminum-Gallium-Ars enide anode enhanced, SP3T PIN diode switch. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, which produce less loss than conventional GaAs processes, as... | |
| MACOM's MA4AGSW4 is an Aluminum-Gallium-Ars enide anode enhanced, SP4T PIN diode switch. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, which produce less loss than conventional GaAs processes, as... | |
| MACOM's MA4AGSW5 is an Aluminum-Gallium-Ars enide anode enhanced, SP5T PIN diode switch. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, produce less loss than conventional GaAs processes, by as... | |
| MACOM's MA4AGSW8-1 is an Aluminum-Gallium-Ars enide (AlGaAs) anode enhanced, SP8T PIN diode Series Switch. Operation is accomplished with 10 mA applied to the low loss port and 0 V for... | |
| MACOM's MASW-000825-12770T is a compact SP2T PIN diode switch in a lead-free 3mm MLP plastic package that offers extraordinary performance with excellent isolation to loss ratio for both TX and... | |
| MACOM's MASW-007070-000100 is a SPST absorptive pHEMT switch with integral TTL driver. This device is in an MLP plastic surface mount package. This switch offers excellent broadband performance and repeatability... | |
| MACOM's MASW-007071-000100 is a SPDT absorptive pHEMT switch with integral TTL driver. This device is in an PQFN plastic surface mount package. This switch offers excellent broadband performance and repeatability... | |
| MACOM's MASW-007072-000100 is a GaAs MMIC absorptive SP2T switch with an integral silicon ASIC driver. This device is in a 16-lead plastic package. This switch offers excellent broadband performance and... | |
| MACOM's MASW-007073-000100 is a GaAs MMIC absorptive SP4T switch with an integral silicon ASIC driver. This device is in a 24-lead plastic package. This switch offers excellent broadband performance and... | |
| MACOM's MASW-007075-0001 00 is a GaAs MMIC absorptive SPDT switch with an integral silicon ASIC driver. This device is in a 24-lead plastic package. This switch offers excellent broadband performance... | |
| MACOM's MASW-007107 is a broadband GaAs PHEMT MMIC SPDT switch in a lead-free 2 mm 8-lead PDFN package. Typical applications are for WLAN IEEE 802.11a + b/g, and MIMO. Other... | |
| MACOM's MASW-007221 is a GaAs monolithic switch in a lead-free SC-70 (SOT-363) surface mount plastic package. The MASW-007221 is ideally suited for applications where very low power consumption, low insertion... | |
| MACOM's MASW-007588 is a broadband GaAs PHEMT MMIC SPDT switch in a low cost, lead-free 3 mm 12-lead PQFN package. The MASW-007588 is ideally suited for applications where very small... | |
| MACOM's MASW-007813 is a GaAs PHEMT MMIC single pole four throw (SP4T) high power switch in a low cost, low profile, lead-free 3 mm PQFN 16-lead package. The MASW-007813 is... | |
| MACOM's MASW-007921 is a broadband GaAs pHEMT MMIC SPDT switch available in a lead-free 2 mm 8-lead PDFN package. The MASW-007921 is ideally suited for applications where very small size... | |
| MACOM's MASW-007935 is a GaAs monolithic switch in a low cost lead-free SOT-26 surface mount plastic package. The MASW-007935 is ideally suited for applications where very low power consumption, low... | |
| MACOM's MASW-008330 is a GaAs PHEMT MMIC single pole three throw (SP3T) switch in a lead-free 2 mm 8-lead PDFN package. The MASW-008330 is ideally suited for applications where low... | |
| MACOM's MASW-008566 is a GaAs PHEMT MMIC single pole four throw (SP4T) high power switch in a low cost 4 mm 16-lead PQFN package. The MASW-008566 is ideally suited for... | |
| MACOM's MASW-008853 is a GaAs PHEMT MMIC single pole double throw (SPDT) high power switch in a low cost SC70 six lead package. The MASW-008853 is ideally suited for applications... | |
| MACOM's MASW-008899 is a GaAs PHEMT MMIC SPDT switch in a lead-free SC-70 (SOT-363) surface mount plastic package. The MASW-008899 is ideally suited for applications where very small size and... | |
| MACOM's MASW-008955 is a GaAs pHEMT MMIC single pole three throw (SP3T) switch in a lead-free 2 mm 8-lead PDFN package. The MASW-008955 is ideally suited for applications where low... | |
| MACOM's MASW-009444 is a GaAs PHEMT MMIC single pole two throw (SP2T) switch in a miniature 1x1mm 6-lead PDFN package. The MASW-009444 is ideally suited for applications where low control... | |
| MACOM's MASW2000 is a use-configurable, high isolation SPDT switch. It can be absorptive or reflective based on user requirements. Designed on MACOM's mature 1-micron MESFET process, this parts is ideal... | |
| MACOM's MASW20000 is a versatile, high isolation SPDT switch. Designed on MACOM's mature 1-micron MESFET process, this parts is ideal for modules or other packaging for use in the Cellular,... | |
| MACOM's MASW2040 is a GaAs MMIC DPDT switch die. The MASW2040 is ideally suited for use where low power consumption is required. Typical applications include transmit/receive switching, switch matrices, and... | |
| MACOM's MASW4060G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and... | |
| MACOM's MASW6010G is an SPDT GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It... | |
| MACOM's MASWCC0006 is a SP6T absorptive pHEMT switch with integral TTL driver. This device is in an MLP plastic surface mount package. This switch offers excellent broadband performance and repeatability... | |
| MACOM's MASWCC0009 is a GaAs MMIC absorptive SP4T switch with an integral silicon ASIC driver. This device is in a 24-lead plastic package. This switch offers excellent broadband performance and... | |
| MACOM's MASWCC0010 is a SP4T absorptive pHEMT switch with integral TTL driver. This device is in an MLP plastic surface mount package. This switch offers excellent broadband performance and repeatability... | |
| MACOM's MASWSS0070 is a broadband GaAs PHEMT MMIC SPDT switch available in a low cost 3 mm 12-lead PQFN package. The MASWSS0070 is ideally suited for applications where very small... | |
| MACOM's MASWSS0093 is a broadband GaAs PHEMT MMIC SPDT switch in a low cost, lead-free 3 mm 12-lead PQFN package. The MASWSS0093 is ideally suited for applications where very small... | |
| MACOM's MASWSS0115 is a GaAs PHEMT MMIC single pole, double throw (SPDT) switch in a low cost, lead-free SC-70 (SOT-363) surface mount plastic package. The MASWSS0115 is ideally suited for... | |
| MACOM's MASWSS0136 is a GaAs PHEMT MMIC SPDT switch in a lead-free SC-70 (SOT-363) surface mount plastic package. The MASWSS0136 is ideally suited for applications where very small size and... | |
| MACOM's MASWSS0143 is a GaAs monolithic switch in a lead-free, SOT-26 surface mount plastic package. The MASWSS0143 is ideally suited for applications where very low power consumption, low intermodulation products... | |
| MACOM's MASWSS0144 is an industry leading GaAs PHEMT single pole, three throw (SP3T) switch in a lead-free 3 mm 12-lead PQFN package. The MASWSS0144 is uniquely configured to enable switching... | |
| MACOM's MASWSS0148 is a GaAs monolithic single pole single throw (SPST) terminated switch in a lead-free 3 mm 12-lead PQFN plastic package. The MASWSS0148 is ideally suited for use where... | |
| MACOM's MASWSS0151 is a GaAs MMIC SPDT switch in a low cost, lead-free SC70 (SOT-363) surface mount plastic package. The MASWSS0151 is ideally suited for applications that include transmit /... | |
| MACOM's MASWSS0157 is a GaAs MMIC SPDT switch in a lead-free SOIC 8-lead surface mount plastic package. The MASWSS0157 is ideally suited for use where low power consumption is required. | |
| MACOM's MASWSS0161 is a GaAs MMIC SPDT switch in a lead free SOIC-8 lead surface mount plastic package. The MASWSS0161 is ideally suited for use where low power consumption is... | |
| MACOM's MASWSS0162 is a GaAs MMIC SPST switch in a lead-free SOIC-8 lead surface mount plastic package. The MASWSS0162 is ideally suited for use where low power consumption is required. | |
| MACOM's MASWSS0166 is a GaAs monolithic switch in a lead-free SOT-363 surface mount plastic package. The MASWSS0166 is ideally suited for applications where very low power consumption, low insertion loss,... | |
| MACOM's MASWSS0167 is a GaAs PHEMT MMIC single pole double throw (SPDT) switch in a lead-free 1.2 x 1.5 mm 6-lead PQFN package. The MASWSS0167 is ideally suited for applications... | |
| MACOM's MASWSS0176 is a GaAs PHEMT MMIC single pole, double throw (SPDT) switch in a low cost, lead-free SOT-26 surface mount plastic package. The MASWSS0176 is ideally suited for applications... | |
| MACOM's MASWSS0179 is a GaAs single pole, double throw switch in a lead-free SOT-26 surface mount plastic package. The MASWSS0179 is ideally suited for applications where very low power consumption,... | |
| MACOM's MASWSS0180 is a GaAs MMIC SPDT terminated switch in a lead-free SOIC 8-lead surface mount plastic package. The MASWSS0180 is ideally suited for use where very low power consumption... | |
| MACOM's MASWSS0181 is a GaAs PHEMT MMIC single pole two throw (SPDT) high power switch in a lead-free SOT-26 package. The MASWSS0181 is ideally suited for applications where high power,... | |
| MACOM's MASWSS0191 is an industry leading GaAs PHEMT MMIC single pole three throw (SP3T) CDMA-GPS switch in a 2 mm 8-lead STDFN package. The MASWSS0191 is uniquely configured to enable... | |
| MACOM's MASWSS0192 is a GaAs PHEMT MMIC SPDT switch in a lead-free SC-70 (SOT-363) surface mount plastic package. The MASWSS0192 is ideally suited for applications where very small size and... | |
| MACOM's MASWSS0199 is an industry leading GaAs PHEMT MMIC single pole three throw (SP3T) CDMA-GPS switch in a lead-free 3 mm 12-lead PQFN package. The MASWSS0199 is uniquely configured to... | |
| MACOM's MASWSS0200 is an industry leading GaAs PHEMT MMIC single pole three throw (SP3T) CDMA-GPS switch in a lead-free 3 mm 12-lead PQFN package. The MASWSS0200 is uniquely configured to... | |
| MACOM's MASWSS0201 is a broadband GaAs PHEMT MMIC SPDT terminated switch in a low cost, lead-free 3 mm 12-lead PQFN package. The MASWSS0201 is ideally suited for applications where an... | |
| MACOM's MASWSS0202 is a broadband GaAs PHEMT MMIC SPDT switch in a lead-free 3 mm 12-lead PQFN package. The MASWSS0202 is ideally suited for applications where very small size and... | |
| MACOM's MASWSS0204 is a GaAs PHEMT MMIC single pole double throw (SPDT) high power switch in a low cost SC70 six lead package. The MASWSS0204 is ideally suited for applications... | |
| MASW-007587 is a broadband GaAs PHEMT MMIC diversity switch available in a lead-free 3 mm 12-lead PQFN package. The MASW- 007587 is ideally suited for applications where very small size... | |
| MASWSS0067 is a GaAs PHEMT MMIC single pole single throw (SPST) switch in a low cost 3 mm FQFP-N 12 lead package. The MASWSS0067 is ideally suited for applications where... | |
| MASWSS0068 is a GaAs PHEMT MMIC single pole double throw (SPDT) switch in a low cost 4 mm FQFP-N 20 lead package. The MASWSS0068 is ideally suited for applications where... | |
| MASWSS0107 is a broadband GaAs PHEMT MMIC diversity switch in a low cost, lead-free 3 mm 12-lead PQFN package. The MASWSS0107 is ideally suited for applications where very small size... | |
| MASWSS0130 is a broadband GaAs PHEMT MMIC DPDT diversity switch in a low cost, lead-free 3 mm 12-lead PQFN plastic package. The MASWSS0130 is ideally suited for applications where very... | |
| MASWSS0169 is a GaAs MMIC SPDT switch in a lead-free MSOP-10 surface mount plastic package. This part is ideal for high isolation, broadband switching requirements. Typical applications include synthesizer switching,... | |
| MASWSS0184 is a broadband GaAs PHEMT MMIC diversity switch available in a lead-free 3 mm 12-lead PQFN package. The MASWSS0184 is ideally suited for applications where very small size and... | |
| Microsemi's MPS2R10-606 is a 100W series-shunt pin diode SPDT reflective switch. It offers 60dB isolation with 0.1dB insertion loss and low 28dB return loss, all in a surface mount 0805... | |
| OM8731M is a single-pole three-throw (SP3T) high powerswitch with a Mobile Industry Processor Interface (MIPI) in aminiature 1.1 x 1.1 x 0.4 mm LGA package. The OM8731M isideally suited for... | |
| OM8741M is a single-pole four-throw (SP4T) high powerswitch with a Mobile Industry Processor Interface (MIPI) in aminiature 1.1 x 1.1 x 0.4 mm LGA package. The OM8741M isideally suited for... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| SP4T UltraCMOS™ RF Switch. The PE42440 is a HaRP™-enhanced SP4T RF Switch developed on the UltraCMOS™ process technology. This general-purpose switch contains 4 identical RF ports and can be used... | |
| SP5T Absorptive UltraCMOS™ High-Isolation RF Switch. 450-4000 MHz, VssEXT option. The PE42451 is a HaRP™-enhanced Absorptive SP5T RF Switch developed on the UltraCMOS™ process technology. This general purpose switch... | |
| SPDT High Isolation Terminated Switch. The MACOM MASW-008543 GaAs monolithic switch provides high isolation in a lead-free, plastic surface mount package. The MASW-008543 is ideal for applications across a broad... | |
| SPDT Switch & Limiter 2.7 - 3.5 GHz. The MASL-011023 is a plastic packaged high power switch-limiter with integrated bias networks. This surface mount, small configuration is designed with minimal... | |
| SPDT Switch & Limiter 2.7-3.5 GHz. The MASL-011023 is a plastic packaged high power switch-limiter with integrated bias networks. This surface mount, small configuration is designed with minimal parasitics usually... | |
| SPST High Isolation CATV Switch 5-1000 MHz. M/A-COM’s MASWSS0067 is a GaAs PHEMT MMIC single pole single throw (SPST) switch in a low cost 3 mm FQFP-N 12 lead package. | |
| Switch, SP2T 100 Watt Reflective 0.03-3.0 GHz. The MASW-011055 is a high power PIN diode SP2T switch in a common anode configuration, operating from 30 MHz to 3 GHz. It... | |
| Switch, SP3T 100 Watt Reflective 0.03-3.0 GHz. The MASW-011030 is a high power PIN diode SP3T switch in a common anode configuration, operating from 30 MHz to 3 GHz. It... | |
| Switch, SP3T 200 W 0.05-1.0 GHz. The MASW-011041 is a high power PIN diode SP3T switch in a common anode configuration, operating from 50 MHz to 1 GHz. It features... | |
| Switch, SP4T 200 W 0.05-1.0 GHz. The MASW-011040 is a high power PIN diode SP4T switch in a common anode configuration, operating from 50 MHz to 1 GHz. It features... | |
| The CCT-38S/CT-38S is an internally terminated, broadband, multi-throw, electromechanical coaxial switch designed to switch a microwave signal from a common input to any of 3, 4, 5, or 6 outputs. | |
| The CCT-39S/CT-39S is an Internally Terminated broadband, multi-throw, electromechanical coaxial switch designed to switch a microwave signal from a common input to any of 3, 4, 5, or 6 outputs. | |
| The CCT-58S/CT-58S is an internally terminated, broadband, multi-throw, electromechanical coaxial switch designed to switch a microwave signal from a common input to any of 3, 4, 5, or 6 outputs. | |
| The CCT-59S/CT-59S is an Internally Terminated broadband, multi-throw, electromechanical coaxial switch designed to switch a microwave signal from a common input to any of 3, 4, 5, or 6 outputs. | |
| The CS-47 is a long-life high performance transfer switch designed for use in 50 Ohms coaxial transmission lines operating over frequencies ranging from DC to 12 GHz. The switch is... | |
| The HMC-C011 is a general purpose broadband high isolation non-reflective GaAs MESFET SPDT switch housed in a miniature hermetic module with field replaceable SMA connectors. Covering DC to 20 GHz,... | |
| The HMC-C019 is a high speed, high isolation GaAs MESFET SPST switch housed in a miniature hermetic module with fi eld replaceable SMA connectors. Covering DC to 20 GHz, the... | |
| The HMC-C058 is a general purpose broadband high isolation non-reflective GaAs MESFET SPDT switch housed in a miniature hermetic module with field replaceable SMA connectors. Covering DC to 18 GHz,... | |
| The HMC-C071 is a general purpose broadband high isolation non-reflective GaAs pHEMT SP4T switch housed in a miniature hermetic module with field replaceable SMA connectors. Covering DC to 20 GHz,... | |
| The HMC1118 is a general-purpose, broadband, nonreflective single-pole, double-throw (SPDT) switch in a LFCSP surface mount package. Covering the 9 kHz to 13.0 GHz range, the switch offers high isolation... | |
| The HMC241ATCPZ-EP is a general-purpose, nonreflective, 100 MHz to 4 GHz single-pole, four-throw (SP4T) switch manufactured using a gallium arsenide (GaAs) process. This switch offers high isolation of 43 dB... | |
| The HMC321ALP4E is a broadband non-reflective GaAs SP8T switch in low cost leadless surface mount packages. Covering DC to 8 GHz, this switch offers high isolation and low insertion loss. | |
| The HMC345ALP3E is a broadband non-reflective GaAs MESFET SP4T switch in a low cost leadless surface mount package. Covering DC to 8 GHz, this switch offers high isolation and low... | |
| The HMC345ALP3E is a broadband non-reflective GaAs MESFET SP4T switch in a low cost leadless surface mount packages. Covering DC to 8 GHz, this switch offers high isolation and low... | |
| The HMC347B is a broadband non-reflective GaAs pHEMT SPDT MMIC chip. Covering 0.1 to 20 GHz, the switch offers high isolation and low insertion loss. The switch features over 52... | |
| The HMC547ALP3E is a general purpose broadband high isolation non-reflective GaAs MESFET SPDT switch in a low cost leadless QFN surface mount plastic package. Covering DC to 20 GHz, the... | |
| The HMC784AMS8GE is a high power SPDT switch in an 8-lead MSOPG package for use in transmit-receive applications which require very low distortion at high input signal power levels. The... | |
| The HMC8038 is a high isolation, nonreflective, 0.1 GHz to 6.0 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for cellular infrastructure applications,... | |
| The HS8718-31 is a low loss SP8T switch with performancefor antenna switch. The HS8718-31 is compatible with +1.35V control logic, which is a key requirement for most cellulartransceivers . This... | |
| The HS8765U-15 is a single-pole four-throw (SP4T) switchdesigned for antenna/impedance tuning applications whichrequires very low insertion loss and high voltage handlingcapability. It can also be used for multi-modeGSM/GPRS/E DGE/WCDMA/LTE transmit/receiveappl... | |
| The HS8765U-16 is a single-pole four-throw (SP4T) switchdesigned for antenna/impedance tuning applications whichrequires very low insertion loss and high voltage handlingcapability. It can also be used for multi-modeGSM/GPRS/E DGE/WCDMA/LTE transmit/receiveappl... | |
| The HS8765V-15 is a single-pole four-throw (SP4T) switchdesigned for antenna/impedance tuning applications whichrequires very low insertion loss and high voltage handlingcapability. It can also be used for multi-modeGSM/GPRS/E DGE/WCDMA/LTE transmit/receiveappl... | |
| The HS8765V-16 is a single-pole four-throw (SP4T) switchdesigned for antenna/impedance tuning applications whichrequires very low insertion loss and high voltage handlingcapability. It can also be used for multi-modeGSM/GPRS/E DGE/WCDMA/LTE transmit/receiveappl... | |
| The HS8775C-15 is a single-pole four-throw (SP4T) switchdesigned for antenna/impedance tuning applications whichrequires very low insertion loss and high voltage handlingcapability. It can also be used for multi-modeGSM/GPRS/E DGE/WCDMA/LTE transmit/receiveappl... | |
| The HS8775C-16 is a single-pole four-throw (SP4T) switchdesigned for antenna/impedance tuning applications whichrequires very low insertion loss and high voltage handlingcapability. It can also be used for multi-modeGSM/GPRS/E DGE/WCDMA/LTE transmit/receiveappl... | |
| The MA-COM MASW-000823-12770T is a SP2T, High Peak and Average Power, High Linearity, Common Anode, PIN diode LNA Protect Switch for TD-SCDMA(2010-2025 MHz) applications. The device is provided in industry... | |
| The MA-COM MASW-000834-13560T is a SPDT Broadband, high linearity, common anode, PIN diode T/R switch for 0.05 - 6.0 GHz applications, including WiMAX & WiFi. The device is provided in... | |
| The MA0S506AJ is a medium power 5.0-6.0 SPDT switch. Typical Applications include the transmit/ receive functions in 802.11a and Hiperlan, and fixed wireless access applications. All RF impedances are 50... | |
| The MA4AGSW2 is an Aluminum-Gallium-Ars enide, single pole, double throw (SPDT), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using MACOM’s hetero-junction technology. AlGaAs technology produces... | |
| The MA4SW110, MA4SW210 and MA4SW310 are broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as moderate signal, high performance switches in applications... | |
| The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) Process, US Patent 5, 268, 310. This... | |
| The MA4SW410 is a SP4T series-shunt broad band switch made with MACOM's unique HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5, 268, 310. This process allows the incorporation of... | |
| The MA4SW410B-1 device is a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) Process, US Patent 5, 268, 310. This process... | |
| The MA4SW510 is a SP5T series-shunt broad band switch made with MACOM's unique HMICT M (Heterolithic Microwave Integrated Circuit) process, US Patent 5, 268, 310. This process allows the incorporation... | |
| The MA4SW510B-1 is a SP5T Series-Shunt broad band switch with integrated bias networks made with MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5, 268, 310. This process allows... | |
| The MA4SW610B-1 is a Reflective SP6T Series-Shunt broad band switch with integrated bias networks made with MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5, 268, 310. This process... | |
| The MACOM MASWSS0121 GaAs monolithic switch provides high isolation in a low-cost, lead-free plastic surface mount package. The MASWSS0121 is ideal for applications across a broad range of frequencies including... | |
| The MACOM MASWSS0178 GaAs monolithic switch provides high isolation in a lead-free, plastic surface mount package. The MASWSS0178 is ideal for applications across a broad range of frequencies including synthesizer... | |
| The MASW-000936 is a SPDT high power, broadband, high linearity, PIN diode T/R switch for 0.05 – 6.0 GHz applications, including WiMAX & WiFi. The device is provided in an... | |
| The MASW-001100 is broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as moderate signal, high performance switches in applications up to 26.5GHz. | |
| The MASW-002100 is broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as moderate signal, high performance switches in applications up to 26.5GHz. | |
| The MASW-002103-1363 is a SPDT, surmount, broadband, monolithic switch using two sets of series and shunt connected PIN diodes. This device is designed for use in broadband, low to moderate... | |
| The MASW-003100 is broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as moderate signal, high performance switches in applications up to 26.5GHz. | |
| The MASW-004100-1193 is a SP4T series-shunt broad band switch made with MACOM's unique HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals... | |
| The MASW-004102-12760 device is a SP4T broadband switch with integrated bias network utilizing MACOM's HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon... | |
| The MASW-005100-1194 is a SP5T Series-Shunt broad band switch made with MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that... | |
| The MASW-006102-13610 device is a SP6T broadband switch with integrated bias network utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon... | |
| The MASW-008322 is a versatile, broadband, high isolation SPDT switch offered in a lead-free 4 mm 24-lead PQFN surface mount plastic package. The design incorporates both series and shunt circuit... | |
| The MASW-008801 is a GaAs pHEMT MMIC single pole double throw (SPDT) switch in a lead-free 3 mm 16-lead PQFN package. The MASW-008801 is ideally suited for applications where low... | |
| The MASW-009276-001DIE is a bumped GaAs pHEMT MMIC SP3T switch. Typical applications are WLAN (802.11 b/g) and Bluetooth applications. The MASW-009276-001DIE delivers high isolation, low insertion loss, and high linearity... | |
| The MASW-009482 is an industry leading GaAs pHEMT MMIC single pole three throw (SP3T) switch in a lead-free 2 mm 12-lead STQFN package with 0.5 mm lead pitch. The MASW-009482... | |
| The MASW-009588 is a GaAs pHEMT MMIC single pole two throw (SP2T) switch in a miniature 1x1mm 6-lead PDFN package. The MASW-009588 is ideally suited for applications where low control... | |
| The MASW-010350 is an industry leading high isolation single pole four throw (SP4T) switch. This device design is optimized to take advantage of separate GaAs pHEMT switch die and CMOS... | |
| The MASW-010351 is an industry leading high isolation single pole five throw (SP5T) switch. This device design is optimized to take advantage of separate GaAs pHEMT switch die and CMOS... | |
| The MASW-010612 is a GaAs pHEMT MMIC SP3T switch in a lead-free 1.5 mm 8-lead PDFN package. This device is ideal for low control voltage, low insertion loss, high isolation... | |
| The MASW-011029 is a W-Band SP3T Switch manufactured using MACOM’s patented AlGaAs PIN Diode MMIC process, on a semi-insulating GaAs substrate. The device is fully passivated with silicon nitride and... | |
| The MASW-011060 is a high power PIN diode SP2T switch in a common anode configuration, operating from 0.5 to 6.0 GHz. It features low insertion loss and excellent linearity. This... | |
| The MASW-011071 is a terminated silicon PIN diode SPDT switch designed for X-Band high power, high performance applications. The switch is assembled in a lead-free 7 mm 44-lead PQFN plastic... | |
| The MASW-011087 is a high power, symmetrical SP4T switch. This broadband, reflective switch was developed for Ka-Band applications that require up to 30 dBm (1 W) power handling while maintaining... | |
| The MASW-011094 is a high power SPDT with 50 Ohm terminated RF ports. This broadband, high linearity, SPDT switch was developed for Ka–Band applications that require up to 40 Watts... | |
| The MASW-011098 is a high power SPDT PIN diode switch in a 5 mm laminate package. This broadband, reflective, high linearity, switch was developed for 26 - 40 GHz applications... | |
| The MASW-011102 is a versatile, broadband, non-reflective, high isolation SPDT switch offered in a lead-free 3 mm 14-lead PQFN surface mount plastic package. The switch operates from DC to 30... | |
| The MASW-011105 is a versatile, broadband, high isolation SPDT switch offered in a lead-free 3 mm 14-lead PQFN surface mount plastic package. The combination of broadband performance along with fast... | |
| The MASW-011107-DIE is a versatile, broadband, non-reflective SPDT switch offered as bare die part. The switch operates from DC to 26.5 GHz and provides <2.0 dB insertion loss and >40... | |
| The MASW-011120 is a SPDT high power, broadband, high linearity, PIN diode T/R switch for 0.03 - 6.0 GHz high power applications. The device is provided in an industry standard... | |
| The MASW-011128-DIE is a versatile, broadband,non-reflec tive SPDT switch offered as bare die part.The switch operates from 0.05 to 26.5 GHz andprovides less than 2 dB insertion loss and 50... | |
| The MASW-011145 is a high power single pole double throw (SPDT) Ka-band switch with 1.4 dB of insertion loss. The power handling capability is 35 dBm. The input and output... | |
| The MASW-011152 is an absorptive, ultra wideband single pole double throw (SPDT) switch with 2.2 dB of insertion loss at 50 GHz. The RF output ports are terminated in 50... | |
| The MASW-011184 is a single pole double throw(SPDT) switch with 0.35 dB of insertion loss in theTX path and 0.5 dB insertion loss in the RX path.The TX path is... | |
| The MASW-011191 is a single pole double throw (SPDT) switch with 0.4 dB of insertion loss in the TX path and 0.54 dB insertion loss in the RX path at... | |
| The MASWSM0002 is a low loss RF switch mounted in a standard outline 4 mm, 16 pin FQFP-N leadless plastic package. It is designed for U-NII, Hiperlan, and 802.11a applications. | |
| The MASWSS0175 is a GaAs pHEMT MMIC DPDT diversity switch in a lead-free 3 mm 12-lead PQFN package. It is designed for low insertion loss and allows for independent control... | |
| The MMS006AA device is a DC-to-20 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT), high isolation single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) chip. The... | |
| The MMS006PP3 is a DC-to-20 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron-mobili ty transistor (pHEMT) single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switch in a plastic leadless... | |
| The MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch chip. The switch delivers... | |
| The MMS008PP3 device is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron-mobili ty transistor (pHEMT) single-pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch in a plastic leadless... | |
| The OM8710C-66 is a dual single-pole six-throw (2XSP6T)switch with a Mobile Industry Processor Interface (MIPI). TheOM8710C-66 maintains low insertion loss and high isolationfor both transmit and receive switching paths. The... | |
| The OM8751D is a silicon-on-insulator (SOI), single-pole,double-t hrow (SPDT) switch. The high linearity andruggedness performance and extremely low insertion lossmakes the device an ideal choice for WLAN applications suchas 802.11... | |
| The OM8775C-25 is a single-pole four-throw (SP4T) switchdesigned for antenna/impedance tuning applications whichrequires very low insertion loss and high voltage handlingcapability. It can also be used for multi-modeGSM/GPRS/E DGE/WCDMA/LTE transmit/receiveappl... | |
| The OM8775Q-15 is a 4xSPST switch designed forantenna/impedance tuning applications which require highvoltage handling capability. All RF path performance isenhanced with low on state resistance, low off statecapacitance, and very... | |
| The OM8775S-15 is a 4xSPST switch designed forantenna/impedance tuning applications which require highvoltage handling capability. All RF path performance isenhanced with low on state resistance, low off statecapacitance, and very... | |
| The OM8790F is a Silicon On Insulator (SOI) double-pole four-throw (DP4T) switch. It is designed for diversity antenna switching applications which require very low insertion loss, high isolation and high... | |
| The OM8790M is a Silicon On Insulator (SOI) three-polethree-thro w (3P3T) switch. It is designed for diversityantenna switching applications which require very lowinsertion loss, high isolation and high linearityperformance . | |
| The OM8792F is a Silicon On Insulator (SOI) double-pole,double-t hrow (DPDT) switch. It is designed for diversityantenna switching applications which require very lowinsertion loss, high isolation and high linearityperformance . | |
| The OM8795G is a Silicon on Insulator (SOI) double-pole,double-t hrow (DPDT) switch. It is designed for generalpurpose switching applications where require very lowinsertion loss, high isolation and high linearityperformance . | |
| The PE423211 is a HaRP technology-enhanced reflective 50 Ohm SPDT RF switch designed for use in high performance ISM, WLAN 802.11 a/b/g/n/ac/ax, Bluetooth and UWB applications supporting bandwidths up to... | |
| The PE42359 UltraCMOS® RF switch is designed to cover a broad range of applications from 10 MHz through 3 GHz. This reflective switch integrates on-board CMOS control logic with a... | |
| The PE4239 UltraCMOS® RF switch is designed to cover a broad range of applications from DC through 3.0 GHz. This reflective switch integrates on-board CMOS control logic with a low... | |
| The PE42412 is a HaRP™ technology-enhanced absorptive SP12T RF switch that supports a frequency range from 10 MHz to 8 GHz. It delivers high isolation, low insertion loss and fast... | |
| The PE42420 is a HaRP™ technology-enhanced absorptive SPDT RF switch designed for use in 3G/4G wireless infrastructure and other high performance RF applications. It is ideal for transmit path switching,... | |
| The PE42421 UltraCMOS® RF switch is designed to cover a broad range of applications from 10 MHz through 3000 MHz. This reflective switch integrates on-board CMOS control logic with a... | |
| The PE42422 a HaRP technology-enhanced SPDT RF switch designed to cover a broad range of applications for 100-6000 MHz.This reflective switch integrates on-board CMOS control logic with a low voltage... | |
| The PE42423 is a HaRP™ technology-enhanced absorptive 50 Ohm SPDT RF switch designed for use in high power and high performance WLAN 802.11 a/b/g/n/ac applications such as carrier and enterprise... | |
| The PE42426 is a HaRP™ technology-enhanced reflective SPDT RF switch designed for use in land mobile radio (LMR) and general switching applications. It delivers high linearity and excellent harmonics performance... | |
| The PE42427 is a HaRP™ technology-enhanced SPDT RF switch designed to cover a broad range of applications from 5-6000 MHz. This reflective switch integrates on-board CMOS control logic with a... | |
| The PE42430 is HARP-enhanced reflective SP3T RF switch developed on the UltraCMOS process technology. This tiny general purpose switch is ideal for WLAN and Bluetooth applications in the 2.4 to... | |
| The PE42440 is a HaRP™-enhanced SP4T RF Switch developed on the UltraCMOS® process technology. This general-purpose switch contains 4 identical RF ports and can be used in a multitude of... | |
| The PE42444 is a HaRP technology-enhanced SP4T RF switch that supports a frequency range from 1.8 GHz to 5 GHz. It delivers extremely low insertion loss, high linearity and fast... | |
| The PE42462 is a HaRP™ technology-enhanced absorptive SP6T RF switch that supports a frequency range from 10 MHz to 8 GHz. It delivers high isolation, low insertion loss and fast... | |
| The PE4250 is a HaRP™-enhanced Reflective SPDT (single pole double throw) RF Switch for use in general switching applications and mobile infrastructure. This device offers a flexible supply voltage of... | |
| The PE4251 is a HaRP™-enhanced Absorptive SPDT (single pole double throw) RF Switch for use in general switching applications and mobile infrastructure. This device offers a flexible supply voltage of... | |
| The PE42512 is a HaRP™ technology-enhanced absorptive SP12T RF switch that supports a frequency range from 9 kHz to 8 GHz. An external VSS pin is available for bypassing... | |
| The PE42521 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from... | |
| The PE42522 is a HaRP™ technology-enhanced absorptive SPDT RF switch that supports a broad frequency range from 9 kHz to 26.5 GHz. This broadband general purpose switch offers excellent isolation,... | |
| The PE42522 is a HaRPTM technology-enhanced absorptive SPDT RF switch that supports a broad frequency range from 9 kHz to 26.5 GHz. This broadband general purpose switch offers excellent... | |
| The PE42525 is a HaRP™ technology-enhanced reflective SPDT RF switch die that supports a wide frequency range from 9 kHz to 60 GHz. This wideband flip-chip switch is pin compatible... | |
| The Type CS-47 is a long life, high performance transfer or crossover switch designed for use in 50 Ohms coaxial transmission lines. The switch is available with either failsafe or... | |
| This device is a Surmount™ X-Band monolithic SPDT switch designed for high power, high performance applications. This Surface Mount chipscale configuration is designed with minimal parasitics usually associated with hybrid... | |
| UltraCMOS® SP5T RF Switch 450–4000 MHz. The PE42452 is a HaRP™ technology-enhanced absorptive SP5T RF switch designed for use in 3G/4G wireless infrastructure and other high performance RF applications. This... | |
| UltraCMOS® SP4T RF Switch 30 MHz–6 GHz. The PE42442 is a HaRP™ technology-enhanced absorptive SP4T RF switch designed for use in 3G/4G wireless infrastructure and other high performance RF... | |
| UltraCMOS® SP4T RF Switch 50–3000 MHz. The PE423641 is a HaRP™ technology-enhanced reflective SP4T RF switch. It has received AEC-Q100 Grade 2 certification and meets the quality and performance... | |
| UltraCMOS® SPDT RF Switch 100 MHz–6 GHz. The PE42424 is a HaRP™ technology-enhanced reflective 50Ω SPDT RF switch designed for use in high power and high performance WLAN 802.11... | |
| UltraCMOS® SPDT RF Switch 100–6000 MHz. The PE423422 is a HaRP™ technology-enhanced reflective SPDT RF switch. It has received AEC-Q100 Grade 2 certification and meets the quality and performance... | |
| UltraCMOS® SPDT RF Switch, 10 MHz–40 GHz. The PE42524 is a HaRP™ technology-enhanced reflective SPDT RF switch die that supports a wide frequency range from 10 MHz to 40... | |
| UltraCMOS® True DC RF Switch, 0 Hz–8000 MHz. The PE42020 is a HaRP™ technology-enhanced SPDT True DC RF switch that operates from zero Hertz up to 8 GHz with... |
| << Prev | Next >> |