The MA4SW110, MA4SW210 and MA4SW310 are broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as moderate signal, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beam lead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using MACOM's patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20, AuSn solder or conductive Ag epoxy.
RF Switch IC General Purpose SP3T 20GHz Die
RF Switch IC General Purpose SP3T 20 GHz Die
| Richardson RFPD | DigiKey | Quarktwin Technology Ltd. | |
|---|---|---|---|
| Product Category | RF Switches | RF Switches | RF Switches |
| Product Number | MA4SW310 | 1465-1051-ND | MA4SW310 |
| Product Name | RF and Microwave Switch | RF Switches | RF Switches |
| Package Type | Die | Die | |
| Frequency Range | 50 to 26500 MHz | 50 to 20000 MHz | 50 to 20000 MHz |
| Insertion Loss | 0.9000 dB | 0.9000 dB | 0.9000 dB |
| Isolation | 42 dB | 42 dB | 42 dB |
