MACOM RF and Microwave Switch MASW-011120

Description
The MASW-011120 is a SPDT high power, broadband, high linearity, PIN diode T/R switch for 0.03 - 6.0 GHz high power applications. The device is provided in an industry standard lead free 5 mm HQFN plastic package. The module is designed for high power handling to be used in a 5G mMIMO, Small Cell BTS, or other TDD-based communication systems. This device incorporates PIN diode die fabricated with a low loss, high isolation switching diode process. MASW-011120 can be used in any application requiring a low-loss, high-isolation, and high-power handing SPDT.
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Description
The MASW-011120 is a SPDT high power, broadband, high linearity, PIN diode T/R switch for 0.03 - 6.0 GHz high power applications. The device is provided in an industry standard lead free 5 mm HQFN plastic package. The module is designed for high power handling to be used in a 5G mMIMO, Small Cell BTS, or other TDD-based communication systems. This device incorporates PIN diode die fabricated with a low loss, high isolation switching diode process. MASW-011120 can be used in any application requiring a low-loss, high-isolation, and high-power handing SPDT.
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Suppliers

Company
Product
Description
Supplier Links
RF and Microwave Switch - MASW-011120 - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
MASW-011120
RF and Microwave Switch MASW-011120
The MASW-011120 is a SPDT high power, broadband, high linearity, PIN diode T/R switch for 0.03 - 6.0 GHz high power applications. The device is provided in an industry standard lead free 5 mm HQFN plastic package. The module is designed for high power handling to be used in a 5G mMIMO, Small Cell BTS, or other TDD-based communication systems. This device incorporates PIN diode die fabricated with a low loss, high isolation switching diode process. MASW-011120 can be used in any application requiring a low-loss, high-isolation, and high-power handing SPDT.

The MASW-011120 is a SPDT high power, broadband, high linearity, PIN diode T/R switch for 0.03 - 6.0 GHz high power applications. The device is provided in an industry standard lead free 5 mm HQFN plastic package. The module is designed for high power handling to be used in a 5G mMIMO, Small Cell BTS, or other TDD-based communication systems. This device incorporates PIN diode die fabricated with a low loss, high isolation switching diode process. MASW-011120 can be used in any application requiring a low-loss, high-isolation, and high-power handing SPDT.

Supplier's Site Datasheet
RF Switches - MASW-011120 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RF Switches
MASW-011120
RF Switches MASW-011120
RF Switch IC LTE SPDT 50Ohm 20-HQFN (5x5)

RF Switch IC LTE SPDT 50Ohm 20-HQFN (5x5)

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Technical Specifications

  Richardson RFPD Quarktwin Technology Ltd.
Product Category RF Switches RF Switches
Product Number MASW-011120 MASW-011120
Product Name RF and Microwave Switch RF Switches
Package Type HQFN Surface Mount
Frequency Range 30 to 6000 MHz 30 to 6000 MHz
Insertion Loss 0.3500 dB 0.5000 dB
Isolation 44 dB 13 dB
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