MACOM RF Switches MASW-006102-13610W

Description
RF Switch IC General Purpose SP6T 18GHz
Request a Quote Datasheet
Description
RF Switch IC General Purpose SP6T 18GHz
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Switches - 1465-1109-ND - DigiKey
Thief River Falls, MN, United States
RF Switches
1465-1109-ND
RF Switches 1465-1109-ND
RF Switch IC General Purpose SP6T 18GHz

RF Switch IC General Purpose SP6T 18GHz

Buy Now Datasheet
RF and Microwave Switch - MASW-006102-13610W - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
MASW-006102-13610W
RF and Microwave Switch MASW-006102-13610W
The MASW-006102-13610 device is a SP6T broadband switch with integrated bias network utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. These high performance switches are suitable for use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80 ns switching speeds can be achieved.

The MASW-006102-13610 device is a SP6T broadband switch with integrated bias network utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. These high performance switches are suitable for use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80 ns switching speeds can be achieved.

Supplier's Site Datasheet
RF Switches - MASW-006102-13610W - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RF Switch IC General Purpose SP6T 18 GHz

RF Switch IC General Purpose SP6T 18 GHz

Buy Now Datasheet

Technical Specifications

  DigiKey Richardson RFPD Quarktwin Technology Ltd.
Product Category RF Switches RF Switches RF Switches
Product Number 1465-1109-ND MASW-006102-13610W MASW-006102-13610W
Product Name RF Switches RF and Microwave Switch RF Switches
Operating Temperature -65 to 125 C (-85 to 257 F) -65 to 125 C (-85 to 257 F)
Frequency Range 2000 to 18000 MHz 2 to 26000 MHz 2000 to 18000 MHz
Insertion Loss 1.9 dB 1.9 dB 1.9 dB
Isolation 39 dB 39 dB 39 dB
Unlock Full Specs
to access all available technical data

Similar Products

Switches and Switch Matrices - T-ISLT-2-2134 - Crane Aerospace & Electronics
Specs
Frequency Range 500 to 1000 MHz
Insertion Loss 0.8000 dB
Isolation 25 dB
View Details
RF Switches - 2449754 - RS Components, Ltd.
RS Components, Ltd.
Specs
Insertion Loss 0.5000 dB
Isolation 22 dB
Impedance 50 ohms
View Details
RF Switch Systems- Mechanical Switch - SSU5183A - Siglent Technologies NA, Inc.
Specs
Connector SMA (optional feature); 2.4mm Female
Control Interface USB
Operating Temperature -25 to 65 C (-13 to 149 F)
View Details