MACOM RF and Microwave Switch MASW-006102-13610W

Description
The MASW-006102-13610 device is a SP6T broadband switch with integrated bias network utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. These high performance switches are suitable for use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80 ns switching speeds can be achieved.
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Description
The MASW-006102-13610 device is a SP6T broadband switch with integrated bias network utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. These high performance switches are suitable for use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80 ns switching speeds can be achieved.
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Suppliers

Company
Product
Description
Supplier Links
RF and Microwave Switch - MASW-006102-13610W - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
MASW-006102-13610W
RF and Microwave Switch MASW-006102-13610W
The MASW-006102-13610 device is a SP6T broadband switch with integrated bias network utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. These high performance switches are suitable for use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80 ns switching speeds can be achieved.

The MASW-006102-13610 device is a SP6T broadband switch with integrated bias network utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. These high performance switches are suitable for use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80 ns switching speeds can be achieved.

Supplier's Site Datasheet
RF Switches - 1465-1109-ND - DigiKey
Thief River Falls, MN, United States
RF Switches
1465-1109-ND
RF Switches 1465-1109-ND
RF Switch IC General Purpose SP6T 18GHz

RF Switch IC General Purpose SP6T 18GHz

Buy Now Datasheet
RF Switches - MASW-006102-13610W - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RF Switch IC General Purpose SP6T 18 GHz

RF Switch IC General Purpose SP6T 18 GHz

Buy Now Datasheet

Technical Specifications

  Richardson RFPD DigiKey Quarktwin Technology Ltd.
Product Category RF Switches RF Switches RF Switches
Product Number MASW-006102-13610W 1465-1109-ND MASW-006102-13610W
Product Name RF and Microwave Switch RF Switches RF Switches
Package Type Die
Frequency Range 2 to 26000 MHz 2000 to 18000 MHz 2000 to 18000 MHz
Insertion Loss 1.9 dB 1.9 dB 1.9 dB
Isolation 39 dB 39 dB 39 dB
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