Microchip Technology, Inc. RF and Microwave Switch MMS006AA

Description
The MMS006AA device is a DC-to-20 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT), high isolation single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) chip. The switch delivers over 40 dB of isolation across the entire DC-to-20 GHz frequency range, while maintaining a low insertion loss of less than 2 dB. The MMS006AA device operates using two negative control voltage logic lines of –5 V and 0 V, respectively. It requires no VEE, and consumes essentially zero current. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).
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Description
The MMS006AA device is a DC-to-20 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT), high isolation single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) chip. The switch delivers over 40 dB of isolation across the entire DC-to-20 GHz frequency range, while maintaining a low insertion loss of less than 2 dB. The MMS006AA device operates using two negative control voltage logic lines of –5 V and 0 V, respectively. It requires no VEE, and consumes essentially zero current. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).
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Suppliers

Company
Product
Description
Supplier Links
RF and Microwave Switch - MMS006AA - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
MMS006AA
RF and Microwave Switch MMS006AA
The MMS006AA device is a DC-to-20 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT), high isolation single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) chip. The switch delivers over 40 dB of isolation across the entire DC-to-20 GHz frequency range, while maintaining a low insertion loss of less than 2 dB. The MMS006AA device operates using two negative control voltage logic lines of –5 V and 0 V, respectively. It requires no VEE, and consumes essentially zero current. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).

The MMS006AA device is a DC-to-20 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT), high isolation single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) chip.

The switch delivers over 40 dB of isolation across the entire DC-to-20 GHz frequency range, while maintaining a low insertion loss of less than 2 dB. The MMS006AA device operates using two negative control voltage logic lines of –5 V and 0 V, respectively. It requires no VEE, and consumes essentially zero current. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).

Supplier's Site
RF Switches - MMS006AA - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RF Switches
MMS006AA
RF Switches MMS006AA
RF Switch IC Radar SPDT 50Ohm Die

RF Switch IC Radar SPDT 50Ohm Die

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Technical Specifications

  Richardson RFPD Quarktwin Technology Ltd.
Product Category RF Switches RF Switches
Product Number MMS006AA MMS006AA
Product Name RF and Microwave Switch RF Switches
Package Type Die
Frequency Range 0.0 to 20000 MHz 0.0 to 20000 MHz
Insertion Loss 2 dB 2 dB
Isolation 40 dB 40 dB
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