MACOM RF Switches MA4SW210B-1

Description
RF Switch IC General Purpose SPDT 18GHz Die
Request a Quote Datasheet
Description
RF Switch IC General Purpose SPDT 18GHz Die
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Switches - 1465-1050-ND - DigiKey
Thief River Falls, MN, United States
RF Switches
1465-1050-ND
RF Switches 1465-1050-ND
RF Switch IC General Purpose SPDT 18GHz Die

RF Switch IC General Purpose SPDT 18GHz Die

Buy Now Datasheet
RF and Microwave Switch - MA4SW210B-1 - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
MA4SW210B-1
RF and Microwave Switch MA4SW210B-1
The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) Process, US Patent 5, 268, 310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80Au/20Sn, Sn62/Pb36/Ag2 solders or electrically conductive silver epoxy.

The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) Process, US Patent 5, 268, 310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80Au/20Sn, Sn62/Pb36/Ag2 solders or electrically conductive silver epoxy.

Supplier's Site
RF Switches - MA4SW210B-1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RF Switches
MA4SW210B-1
RF Switches MA4SW210B-1
RF Switch IC General Purpose SPDT 18 GHz Die

RF Switch IC General Purpose SPDT 18 GHz Die

Buy Now

Technical Specifications

  DigiKey Richardson RFPD Quarktwin Technology Ltd.
Product Category RF Switches RF Switches RF Switches
Product Number 1465-1050-ND MA4SW210B-1 MA4SW210B-1
Product Name RF Switches RF and Microwave Switch RF Switches
Package Type Die Die
Operating Temperature -65 to 125 C (-85 to 257 F) -65 to 125 C (-85 to 257 F)
Frequency Range 2000 to 18000 MHz 2000 to 26000 MHz 2000 to 18000 MHz
Insertion Loss 1.2 dB 1.2 dB 1.2 dB
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