The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) Process, US Patent 5, 268, 310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80Au/20Sn, Sn62/Pb36/Ag2 solders or electrically conductive silver epoxy.
RF Switch IC General Purpose SPDT 18GHz Die
RF Switch IC General Purpose SPDT 18 GHz Die
| Richardson RFPD | DigiKey | Quarktwin Technology Ltd. | |
|---|---|---|---|
| Product Category | RF Switches | RF Switches | RF Switches |
| Product Number | MA4SW210B-1 | 1465-1050-ND | MA4SW210B-1 |
| Product Name | RF and Microwave Switch | RF Switches | RF Switches |
| Package Type | Die | Die | |
| Frequency Range | 2000 to 26000 MHz | 2000 to 18000 MHz | 2000 to 18000 MHz |
| Insertion Loss | 1.2 dB | 1.2 dB | 1.2 dB |
| Isolation | 40 dB | 40 dB | 40 dB |
