Microchip Technology, Inc. RF and Microwave Switch MMS008PP3

Description
The MMS008PP3 device is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron-mobili ty transistor (pHEMT) single-pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch in a plastic leadless 3 mm × 3 mm surface-mount package. The switch delivers an average of 40 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.8 dB. This switch includes an on-board binary 2:4 decoder circuit which reduces the required logic control lines. The control voltages are 0/–5 V, with a fixed bias of –5 V.
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Description
The MMS008PP3 device is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron-mobili ty transistor (pHEMT) single-pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch in a plastic leadless 3 mm × 3 mm surface-mount package. The switch delivers an average of 40 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.8 dB. This switch includes an on-board binary 2:4 decoder circuit which reduces the required logic control lines. The control voltages are 0/–5 V, with a fixed bias of –5 V.
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Suppliers

Company
Product
Description
Supplier Links
RF and Microwave Switch - MMS008PP3 - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
MMS008PP3
RF and Microwave Switch MMS008PP3
The MMS008PP3 device is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron-mobili ty transistor (pHEMT) single-pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch in a plastic leadless 3 mm × 3 mm surface-mount package. The switch delivers an average of 40 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.8 dB. This switch includes an on-board binary 2:4 decoder circuit which reduces the required logic control lines. The control voltages are 0/–5 V, with a fixed bias of –5 V.

The MMS008PP3 device is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) single-pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch in a plastic leadless 3 mm × 3 mm surface-mount package. The switch delivers an average of 40 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.8 dB. This switch includes an on-board binary 2:4 decoder circuit which reduces the required logic control lines. The control voltages are 0/–5 V, with a fixed bias of –5 V.

Supplier's Site
RF and Wireless - RF Switches - MMS008PP3 - Acme Chip Technology Co., Limited
Shenzhen, China
RF and Wireless - RF Switches
MMS008PP3
RF and Wireless - RF Switches MMS008PP3
IC RF SWITCH SP4T 8GHZ DIE

IC RF SWITCH SP4T 8GHZ DIE

Supplier's Site
RF Switches - MMS008PP3 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RF Switches
MMS008PP3
RF Switches MMS008PP3
RF Switch IC Radar SP4T 50Ohm Die

RF Switch IC Radar SP4T 50Ohm Die

Buy Now Datasheet

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category RF Switches RF Switches RF Switches
Product Number MMS008PP3 MMS008PP3 MMS008PP3
Product Name RF and Microwave Switch RF and Wireless - RF Switches RF Switches
Package Type QFN
Frequency Range 0.0 to 8000 MHz 0.0 to 8000 MHz 0.0 to 8000 MHz
Insertion Loss 1.7 dB 1.7 dB 1.7 dB
Isolation 43 dB 43 dB 43 dB
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