The MA4SW610B-1 is a Reflective SP6T Series-Shunt broad band switch with integrated bias networks made with MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5, 268, 310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through 18 GHz. Applications These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5 V/-5 V, TTL controlled PIN diode driver, 80 ns switching speeds are achieved.
RF Switch IC General Purpose SP6T 18GHz Die
RF Switch IC General Purpose SP6T 18 GHz Die
| Richardson RFPD | DigiKey | Quarktwin Technology Ltd. | |
|---|---|---|---|
| Product Category | RF Switches | RF Switches | RF Switches |
| Product Number | MA4SW610B-1 | 1465-1056-ND | MA4SW610B-1 |
| Product Name | RF and Microwave Switch | RF Switches | RF Switches |
| Package Type | Die | Die | |
| Frequency Range | 2000 to 18000 MHz | 2000 to 18000 MHz | 2000 to 18000 MHz |
| Insertion Loss | 1.9 dB | 1.9 dB | 1.9 dB |
| Isolation | 35 dB | 39 dB | 39 dB |
