MACOM RF and Microwave Switch MA4SW510

Description
The MA4SW510 is a SP5T series-shunt broad band switch made with MACOM's unique HMICT M (Heterolithic Microwave Integrated Circuit) process, US Patent 5, 268, 310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in a low loss, low dispersion glass. This hybrid combination of silicon and glass gives HMIC switches exceptional low loss and remarkable high isolation through low millimeter-wave frequencies. Applications These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 50ns switching speeds are achieved.
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Description
The MA4SW510 is a SP5T series-shunt broad band switch made with MACOM's unique HMICT M (Heterolithic Microwave Integrated Circuit) process, US Patent 5, 268, 310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in a low loss, low dispersion glass. This hybrid combination of silicon and glass gives HMIC switches exceptional low loss and remarkable high isolation through low millimeter-wave frequencies. Applications These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 50ns switching speeds are achieved.
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Suppliers

Company
Product
Description
Supplier Links
RF and Microwave Switch - MA4SW510 - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
MA4SW510
RF and Microwave Switch MA4SW510
The MA4SW510 is a SP5T series-shunt broad band switch made with MACOM's unique HMICT M (Heterolithic Microwave Integrated Circuit) process, US Patent 5, 268, 310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in a low loss, low dispersion glass. This hybrid combination of silicon and glass gives HMIC switches exceptional low loss and remarkable high isolation through low millimeter-wave frequencies. Applications These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 50ns switching speeds are achieved.

The MA4SW510 is a SP5T series-shunt broad band switch made with MACOM's unique HMICT M (Heterolithic Microwave Integrated Circuit) process, US Patent 5, 268, 310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in a low loss, low dispersion glass. This hybrid combination of silicon and glass gives HMIC switches exceptional low loss and remarkable high isolation through low millimeter-wave frequencies. Applications These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 50ns switching speeds are achieved.

Supplier's Site Datasheet
RF Switches - 1465-MA4SW510-ND - DigiKey
Thief River Falls, MN, United States
RF Switches
1465-MA4SW510-ND
RF Switches 1465-MA4SW510-ND
RF Switch IC General Purpose SP5T Die

RF Switch IC General Purpose SP5T Die

Buy Now Datasheet
RF Switches - MA4SW510 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RF Switches
MA4SW510
RF Switches MA4SW510
RF Switch IC General Purpose SP5T Die

RF Switch IC General Purpose SP5T Die

Buy Now Datasheet

Technical Specifications

  Richardson RFPD DigiKey Quarktwin Technology Ltd.
Product Category RF Switches RF Switches RF Switches
Product Number MA4SW510 1465-MA4SW510-ND MA4SW510
Product Name RF and Microwave Switch RF Switches RF Switches
Package Type Die Die
Frequency Range 50 to 26000 MHz 50 to 20000 MHz 50 to 20000 MHz
Insertion Loss 1 dB 0.9000 dB 0.9000 dB
Isolation 30 dB 38 dB 38 dB
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