MACOM RF and Microwave Switch MA4SW410B-1

Description
The MA4SW410B-1 device is a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) Process, US Patent 5, 268, 310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through Ku Band frequencies. Applications These High Performance Switches are suitable for use in Multi-Band ECM, Radar, and Instrumentation Control Circuits where High Isolation to Insertion Loss Ratios are Required. With a Standard +5 V/-5 V, TTL Controlled PIN Diode Driver, 80 ns Switching Speeds are Achieved
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Description
The MA4SW410B-1 device is a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) Process, US Patent 5, 268, 310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through Ku Band frequencies. Applications These High Performance Switches are suitable for use in Multi-Band ECM, Radar, and Instrumentation Control Circuits where High Isolation to Insertion Loss Ratios are Required. With a Standard +5 V/-5 V, TTL Controlled PIN Diode Driver, 80 ns Switching Speeds are Achieved
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Suppliers

Company
Product
Description
Supplier Links
RF and Microwave Switch - MA4SW410B-1 - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
MA4SW410B-1
RF and Microwave Switch MA4SW410B-1
The MA4SW410B-1 device is a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) Process, US Patent 5, 268, 310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through Ku Band frequencies. Applications These High Performance Switches are suitable for use in Multi-Band ECM, Radar, and Instrumentation Control Circuits where High Isolation to Insertion Loss Ratios are Required. With a Standard +5 V/-5 V, TTL Controlled PIN Diode Driver, 80 ns Switching Speeds are Achieved

The MA4SW410B-1 device is a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) Process, US Patent 5, 268, 310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through Ku Band frequencies. Applications These High Performance Switches are suitable for use in Multi-Band ECM, Radar, and Instrumentation Control Circuits where High Isolation to Insertion Loss Ratios are Required. With a Standard +5 V/-5 V, TTL Controlled PIN Diode Driver, 80 ns Switching Speeds are Achieved

Supplier's Site Datasheet
RF Switches - 1465-1054-ND - DigiKey
Thief River Falls, MN, United States
RF Switches
1465-1054-ND
RF Switches 1465-1054-ND
RF Switch IC General Purpose SP4T 18GHz Die

RF Switch IC General Purpose SP4T 18GHz Die

Buy Now Datasheet
RF Switches - MA4SW410B-1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RF Switches
MA4SW410B-1
RF Switches MA4SW410B-1
RF Switch IC General Purpose SP4T 18 GHz Die

RF Switch IC General Purpose SP4T 18 GHz Die

Buy Now Datasheet

Technical Specifications

  Richardson RFPD DigiKey Quarktwin Technology Ltd.
Product Category RF Switches RF Switches RF Switches
Product Number MA4SW410B-1 1465-1054-ND MA4SW410B-1
Product Name RF and Microwave Switch RF Switches RF Switches
Package Type Die Die
Frequency Range 2000 to 18000 MHz 2000 to 18000 MHz 2000 to 18000 MHz
Insertion Loss 1.4 dB 1.4 dB 1.4 dB
Isolation 35 dB 35 dB 35 dB
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