RF Switch IC General Purpose SP4T 18GHz Die
The MA4SW410B-1 device is a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) Process, US Patent 5, 268, 310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through Ku Band frequencies. Applications These High Performance Switches are suitable for use in Multi-Band ECM, Radar, and Instrumentation Control Circuits where High Isolation to Insertion Loss Ratios are Required. With a Standard +5 V/-5 V, TTL Controlled PIN Diode Driver, 80 ns Switching Speeds are Achieved
RF Switch IC General Purpose SP4T 18 GHz Die
| DigiKey | Richardson RFPD | Quarktwin Technology Ltd. | |
|---|---|---|---|
| Product Category | RF Switches | RF Switches | RF Switches |
| Product Number | 1465-1054-ND | MA4SW410B-1 | MA4SW410B-1 |
| Product Name | RF Switches | RF and Microwave Switch | RF Switches |
| Package Type | Die | Die | |
| Operating Temperature | -65 to 125 C (-85 to 257 F) | -65 to 125 C (-85 to 257 F) | |
| Frequency Range | 2000 to 18000 MHz | 2000 to 18000 MHz | 2000 to 18000 MHz |
| Insertion Loss | 1.4 dB | 1.4 dB | 1.4 dB |
