The MA4SW510B-1 is a SP5T Series-Shunt broad band switch with integrated bias networks made with MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5, 268, 310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through 18 GHz. Applications These high performance switches are suitable for the use in multiband ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5 V/-5 V, TTL controlled PIN diode driver, 80 ns switching speeds are achieved.
RF Switch IC General Purpose SP5T 18GHz Die
RF Switch IC General Purpose SP5T 18 GHz Die
| Richardson RFPD | DigiKey | Quarktwin Technology Ltd. | |
|---|---|---|---|
| Product Category | RF Switches | RF Switches | RF Switches |
| Product Number | MA4SW510B-1 | 1465-1055-ND | MA4SW510B-1 |
| Product Name | RF and Microwave Switch | RF Switches | RF Switches |
| Package Type | Die | Die | |
| Frequency Range | 2000 to 18000 MHz | 2000 to 18000 MHz | 2000 to 18000 MHz |
| Insertion Loss | 1.8 dB | 1.8 dB | 1.8 dB |
| Isolation | 35 dB | 35 dB | 35 dB |
