MACOM RF Switches MASWSS0130TR-3000

Description
RF Switch IC 802.11b/g DPDT 3GHz 50Ohm 12-PQFN (3x3)
Request a Quote Datasheet
Description
RF Switch IC 802.11b/g DPDT 3GHz 50Ohm 12-PQFN (3x3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Switches - 1465-1375-2-ND - DigiKey
Thief River Falls, MN, United States
RF Switches
1465-1375-2-ND
RF Switches 1465-1375-2-ND
RF Switch IC 802.11b/g DPDT 3GHz 50Ohm 12-PQFN (3x3)

RF Switch IC 802.11b/g DPDT 3GHz 50Ohm 12-PQFN (3x3)

Buy Now Datasheet
RF Switches - 1465-1375-1-ND - DigiKey
Thief River Falls, MN, United States
RF Switches
1465-1375-1-ND
RF Switches 1465-1375-1-ND
RF Switch IC 802.11b/g DPDT 3GHz 50Ohm 12-PQFN (3x3)

RF Switch IC 802.11b/g DPDT 3GHz 50Ohm 12-PQFN (3x3)

Buy Now Datasheet
RF Switches - 1465-1375-6-ND - DigiKey
Thief River Falls, MN, United States
RF Switches
1465-1375-6-ND
RF Switches 1465-1375-6-ND
RF Switch IC 802.11b/g DPDT 3GHz 50Ohm 12-PQFN (3x3)

RF Switch IC 802.11b/g DPDT 3GHz 50Ohm 12-PQFN (3x3)

Buy Now Datasheet
RF and Microwave Switch - MASWSS0130TR-3000 - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
MASWSS0130TR-3000
RF and Microwave Switch MASWSS0130TR-3000
MASWSS0130 is a broadband GaAs PHEMT MMIC DPDT diversity switch in a low cost, lead-free 3 mm 12-lead PQFN plastic package. The MASWSS0130 is ideally suited for applications where very small size and low cost are required. Typical applications are for WLAN IEEE 802.11b/g systems that employ two antennas for transmit and receive diversity. Designed for high power, this DPDT switch is optimized for high linearity at 2.4 GHz. The MASWSS0130 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability.

MASWSS0130 is a broadband GaAs PHEMT MMIC DPDT diversity switch in a low cost, lead-free 3 mm 12-lead PQFN plastic package. The MASWSS0130 is ideally suited for applications where very small size and low cost are required. Typical applications are for WLAN IEEE 802.11b/g systems that employ two antennas for transmit and receive diversity. Designed for high power, this DPDT switch is optimized for high linearity at 2.4 GHz. The MASWSS0130 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability.

Supplier's Site Datasheet
RF Switches - MASWSS0130TR-3000 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RF Switch IC 802.11b/g DPDT 3 GHz 50Ohm 12-PQFN (3x3)

RF Switch IC 802.11b/g DPDT 3 GHz 50Ohm 12-PQFN (3x3)

Buy Now Datasheet

Technical Specifications

  DigiKey Richardson RFPD Quarktwin Technology Ltd.
Product Category RF Switches RF Switches RF Switches
Product Number 1465-1375-2-ND MASWSS0130TR-3000 MASWSS0130TR-3000
Product Name RF Switches RF and Microwave Switch RF Switches
Package Type Surface Mount; 12-VFQFN Exposed Pad PQFN
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Frequency Range 500 to 3000 MHz 500 to 3000 MHz 500 to 3000 MHz
Insertion Loss 0.6000 dB 0.6000 dB 0.6000 dB
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