MACOM RF and Microwave Switch MASW-003100-11920W

Description
The MASW-003100 is broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as moderate signal, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beam lead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using MACOM's patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20 AuSn solder or conductive Ag epoxy.
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Description
The MASW-003100 is broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as moderate signal, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beam lead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using MACOM's patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20 AuSn solder or conductive Ag epoxy.
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Suppliers

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Product
Description
Supplier Links
RF and Microwave Switch - MASW-003100-11920W - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
MASW-003100-11920W
RF and Microwave Switch MASW-003100-11920W
The MASW-003100 is broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as moderate signal, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beam lead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using MACOM's patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20 AuSn solder or conductive Ag epoxy.

The MASW-003100 is broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as moderate signal, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beam lead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using MACOM's patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20 AuSn solder or conductive Ag epoxy.

Supplier's Site Datasheet
RF Switches - 1465-1101-ND - DigiKey
Thief River Falls, MN, United States
RF Switches
1465-1101-ND
RF Switches 1465-1101-ND
RF Switch IC General Purpose SP3T 20GHz

RF Switch IC General Purpose SP3T 20GHz

Buy Now Datasheet
RF Switches - MASW-003100-11920W - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RF Switch IC General Purpose SP3T 20 GHz

RF Switch IC General Purpose SP3T 20 GHz

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Technical Specifications

  Richardson RFPD DigiKey Quarktwin Technology Ltd.
Product Category RF Switches RF Switches RF Switches
Product Number MASW-003100-11920W 1465-1101-ND MASW-003100-11920W
Product Name RF and Microwave Switch RF Switches RF Switches
Package Type Die Module
Frequency Range 50 to 26500 MHz 50 to 20000 MHz 50 to 20000 MHz
Insertion Loss 0.9000 dB 0.9000 dB 0.9000 dB
Isolation 42 dB 42 dB 42 dB
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