MACOM RF and Microwave Switch MASW4030G

Description
M/A/COM's MASW4030G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4030G is fabricated using a mature 1-micron gate length GaAs MESFET process. The process features full chip passivation for increased performance and reliability.
Request a Quote Datasheet
Description
M/A/COM's MASW4030G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4030G is fabricated using a mature 1-micron gate length GaAs MESFET process. The process features full chip passivation for increased performance and reliability.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF and Microwave Switch - MASW4030G - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
MASW4030G
RF and Microwave Switch MASW4030G
M/A/COM's MASW4030G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4030G is fabricated using a mature 1-micron gate length GaAs MESFET process. The process features full chip passivation for increased performance and reliability.

M/A/COM's MASW4030G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4030G is fabricated using a mature 1-micron gate length GaAs MESFET process. The process features full chip passivation for increased performance and reliability.

Supplier's Site Datasheet
RF Switches - MASW4030G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RF Switches
MASW4030G
RF Switches MASW4030G
RF Switch IC General Purpose SPDT 50Ohm Die

RF Switch IC General Purpose SPDT 50Ohm Die

Buy Now Datasheet
RF/IF and RFID - RF Switches - MASW4030G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
RF/IF and RFID - RF Switches
MASW4030G
RF/IF and RFID - RF Switches MASW4030G
RF/IF and RFID - RF Switches

RF/IF and RFID - RF Switches

Supplier's Site

Technical Specifications

  Richardson RFPD Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category RF Switches RF Switches RF Switches
Product Number MASW4030G MASW4030G MASW4030G
Product Name RF and Microwave Switch RF Switches RF/IF and RFID - RF Switches
Package Type Die
Frequency Range 0.0 to 4000 MHz 50 to 4000 MHz
Insertion Loss 1 dB 1 dB
Isolation 60 dB 40 dB 40 dB
Unlock Full Specs
to access all available technical data

Similar Products

RF Switch Systems- Mechanical Switch - SSU5266A - Siglent Technologies NA, Inc.
Specs
Connector SMA (optional feature); 2.4mm Female
Control Interface USB
Operating Temperature -25 to 65 C (-13 to 149 F)
View Details
Absorptive SPDT, Solid State Switch, 10 MHz - 6 GHz, 50Ω - U2C-1SP2T-63VH - Mini-Circuits
Specs
Package Type Connectorized
Connector SMA
Operating Temperature 0.0 to 50 C (32 to 122 F)
View Details
RF Switches - 2312-TGS2353-2-SMTR7TR-ND - DigiKey
Specs
Package Type Surface Mount; 22-PowerFQFN
Operating Temperature -40 to 85 C (-40 to 185 F)
Frequency Range 500 to 18000 MHz
View Details
Waveguide Switches - NWSD-51 - kTB Solutions
Specs
Frequency Range 15000 to 22000 MHz
Type Double Pole Double Throw; DPDT
View Details