MACOM RF and Microwave Switch MA4AGSW3

Description
MACOM's MA4AGSW3 is an Aluminum-Gallium-Ars enide anode enhanced, SP3T PIN diode switch. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, which produce less loss than conventional GaAs processes, as much as 0.3 dB reduction in insertion loss at 50 GHz. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode airbridges during handling. Off-chip bias circuitry is required and allows maximum design flexibility. The low capacitance of the PIN diodes used makes it ideal for use in microwave multi-throw switch designs, where the series capacitance in each off-arm will load the input. Also, the low series resistance of the diodes helps the total insertion loss of the devices at microwave frequencies. These AlGaAs PIN switches are used as the switching arrays for radar systems, radiometers, and other multi-assembly components.
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Description
MACOM's MA4AGSW3 is an Aluminum-Gallium-Ars enide anode enhanced, SP3T PIN diode switch. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, which produce less loss than conventional GaAs processes, as much as 0.3 dB reduction in insertion loss at 50 GHz. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode airbridges during handling. Off-chip bias circuitry is required and allows maximum design flexibility. The low capacitance of the PIN diodes used makes it ideal for use in microwave multi-throw switch designs, where the series capacitance in each off-arm will load the input. Also, the low series resistance of the diodes helps the total insertion loss of the devices at microwave frequencies. These AlGaAs PIN switches are used as the switching arrays for radar systems, radiometers, and other multi-assembly components.
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Suppliers

Company
Product
Description
Supplier Links
RF and Microwave Switch - MA4AGSW3 - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
MA4AGSW3
RF and Microwave Switch MA4AGSW3
MACOM's MA4AGSW3 is an Aluminum-Gallium-Ars enide anode enhanced, SP3T PIN diode switch. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, which produce less loss than conventional GaAs processes, as much as 0.3 dB reduction in insertion loss at 50 GHz. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode airbridges during handling. Off-chip bias circuitry is required and allows maximum design flexibility. The low capacitance of the PIN diodes used makes it ideal for use in microwave multi-throw switch designs, where the series capacitance in each off-arm will load the input. Also, the low series resistance of the diodes helps the total insertion loss of the devices at microwave frequencies. These AlGaAs PIN switches are used as the switching arrays for radar systems, radiometers, and other multi-assembly components.

MACOM's MA4AGSW3 is an Aluminum-Gallium-Arsenide anode enhanced, SP3T PIN diode switch. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, which produce less loss than conventional GaAs processes, as much as 0.3 dB reduction in insertion loss at 50 GHz. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode airbridges during handling. Off-chip bias circuitry is required and allows maximum design flexibility. The low capacitance of the PIN diodes used makes it ideal for use in microwave multi-throw switch designs, where the series capacitance in each off-arm will load the input. Also, the low series resistance of the diodes helps the total insertion loss of the devices at microwave frequencies. These AlGaAs PIN switches are used as the switching arrays for radar systems, radiometers, and other multi-assembly components.

Supplier's Site Datasheet
RF Switches - MA4AGSW3 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RF Switches
MA4AGSW3
RF Switches MA4AGSW3
RF Switch IC General Purpose SP3T 50 GHz Die

RF Switch IC General Purpose SP3T 50 GHz Die

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Technical Specifications

  Richardson RFPD Quarktwin Technology Ltd.
Product Category RF Switches RF Switches
Product Number MA4AGSW3 MA4AGSW3
Product Name RF and Microwave Switch RF Switches
Package Type Die
Frequency Range 50 to 70000 MHz 50 to 50000 MHz
Insertion Loss 0.8000 dB 0.3000 dB
Isolation 31 dB 31 dB
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