United Monolithic Semiconductors USA, Inc. mmW LNA CHA2080-98F

Description
UMS is developing an E-Band (71 to 86 GHz) Low Noise Amplifier with variable gain. This amplifier integrates four stages with 3.5dB Noise Figure associated with 22dB Gain and +10dBm Output Power at 1dB Gain compression. This circuit is dedicated to telecommunication, particularly well suited for the two main E-Bands used in new generation of High Capacity Backhaul. It is manufactured on 0.1µm gate length pHEMT process and is available in chip form, with BCB layer protection.
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Description
UMS is developing an E-Band (71 to 86 GHz) Low Noise Amplifier with variable gain. This amplifier integrates four stages with 3.5dB Noise Figure associated with 22dB Gain and +10dBm Output Power at 1dB Gain compression. This circuit is dedicated to telecommunication, particularly well suited for the two main E-Bands used in new generation of High Capacity Backhaul. It is manufactured on 0.1µm gate length pHEMT process and is available in chip form, with BCB layer protection.
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
mmW LNA - CHA2080-98F - Richardson RFPD
Downers Grove, IL, United States
UMS is developing an E-Band (71 to 86 GHz) Low Noise Amplifier with variable gain. This amplifier integrates four stages with 3.5dB Noise Figure associated with 22dB Gain and +10dBm Output Power at 1dB Gain compression. This circuit is dedicated to telecommunication, particularly well suited for the two main E-Bands used in new generation of High Capacity Backhaul. It is manufactured on 0.1µm gate length pHEMT process and is available in chip form, with BCB layer protection.

UMS is developing an E-Band (71 to 86 GHz) Low Noise Amplifier with variable gain. This amplifier integrates four stages with 3.5dB Noise Figure associated with 22dB Gain and +10dBm Output Power at 1dB Gain compression. This circuit is dedicated to telecommunication, particularly well suited for the two main E-Bands used in new generation of High Capacity Backhaul. It is manufactured on 0.1µm gate length pHEMT process and is available in chip form, with BCB layer protection.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA2080-98F
Product Name mmW LNA
Amplifier Type Low Noise Amplifier
Frequency Range 71000 to 86000 MHz
Maximum Gain 22 dB
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