NXP Semiconductors RF & MW Power Amplifier A2I09VD050NR1

Description
The A2I09VD050N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.
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Description
The A2I09VD050N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF & MW Power Amplifier - A2I09VD050NR1 - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
A2I09VD050NR1
RF & MW Power Amplifier A2I09VD050NR1
The A2I09VD050N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.

The A2I09VD050N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.

Supplier's Site Datasheet
RF Amplifiers - 568-A2I09VD050NR1TR-ND - DigiKey
Thief River Falls, MN, United States
IC RF AMP 6.3W 48V TO270 WB-15

IC RF AMP 6.3W 48V TO270 WB-15

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Technical Specifications

  Richardson RFPD DigiKey
Product Category RF Amplifiers RF Amplifiers
Product Number A2I09VD050NR1 568-A2I09VD050NR1TR-ND
Product Name RF & MW Power Amplifier RF Amplifiers
Amplifier Type Power Amplifier Low Noise Amplifier; Power Amplifier
Frequency Range 575 to 960 MHz 575 to 960 MHz
Maximum Gain 36.5 dB 38 dB
Output Power 53.7 dBm
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