United Monolithic Semiconductors USA, Inc. mmW Power Amplifier CHA7452-99F

Description
The CHA7452-99F is a four stage High Power Amplifier operating between 35.5 and 40.5 GHz and providing typically 9W of saturated output power and 24 % of power added efficiency. The typical power supply is 20V/290mA (quiescent current). Thanks to a low drain voltage biasing, the CHA7452-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space evaluated 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.
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Description
The CHA7452-99F is a four stage High Power Amplifier operating between 35.5 and 40.5 GHz and providing typically 9W of saturated output power and 24 % of power added efficiency. The typical power supply is 20V/290mA (quiescent current). Thanks to a low drain voltage biasing, the CHA7452-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space evaluated 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.
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Suppliers

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Product
Description
Supplier Links
mmW Power Amplifier - CHA7452-99F - Richardson RFPD
Downers Grove, IL, United States
mmW Power Amplifier
CHA7452-99F
mmW Power Amplifier CHA7452-99F
The CHA7452-99F is a four stage High Power Amplifier operating between 35.5 and 40.5 GHz and providing typically 9W of saturated output power and 24 % of power added efficiency. The typical power supply is 20V/290mA (quiescent current). Thanks to a low drain voltage biasing, the CHA7452-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space evaluated 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.

The CHA7452-99F is a four stage High Power Amplifier operating between 35.5 and 40.5 GHz and providing typically 9W of saturated output power and 24 % of power added efficiency. The typical power supply is 20V/290mA (quiescent current). Thanks to a low drain voltage biasing, the CHA7452-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space evaluated 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA7452-99F
Product Name mmW Power Amplifier
Amplifier Type Power Amplifier
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