The QJD1720SA1 is a dual silicon carbide MOSFET module designed for high-frequency, high-temperature power systems, featuring 200 A continuous current, 1700 V drain-source voltage, and a typ 7.3 mΩ on-resistance. Each module integrates two SiC MOSFETs with reverse-connected Schottky diodes, an isolated aluminum nitride baseplate, and a thermistor for temperature monitoring. It measures 420 grams and mounts via M5 screws with a torque of 3.5 N-m. Junction temperature operational range is -40°C to 150°C, with maximum junction and case temperatures of 175°C and 125°C, respectively. Thermal resistance from junction to case is 0.181°C/W per MOSFET. Isolation voltage is 4000 V, and internal stray inductance is 15 nH. The device is qualified for operation in demanding power conversion applications with zero reverse recovery diodes and low switching losses.
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
| Richardson RFPD | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QJD1720SA1 |
| Product Name | Silicon Carbide MOSFET Modules |
