The QJD1218SA1 is a dual Silicon Carbide MOSFET module rated for 180 amperes and 1200 volts, with a typical on-resistance of 13 mΩ at 25°C. It features an isolated aluminum nitride baseplate, zero reverse recovery diodes, and operates continuously with a junction temperature up to 150°C. The module weighs 270 grams and is designed for high-frequency, high-temperature power systems. Thermal resistance from junction to case is 0.34°C/W per MOSFET and 0.31°C/W per diode. Mounting torque for M6 screws is 5 N-m, and the isolation voltage is 3500 volts. The device supports a maximum junction temperature of 175°C and includes an integrated NTC thermistor with 5 kΩ resistance at 25°C.
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
| Richardson RFPD | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QJD1218SA1 |
| Product Name | Silicon Carbide MOSFET Modules |
