Richardson RFPD Power IGBT Transistor V23990P580A46PM

Description
flowPIM 1 3rd gen, 1200V / 35A. Features: 3- rectifier, BRC, Inverter, NTC; Very compact housing, easy to route; IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour; High performance with AIN substrate. Applications: Motor Drives, Power Generation.
Request a Quote
Description
flowPIM 1 3rd gen, 1200V / 35A. Features: 3- rectifier, BRC, Inverter, NTC; Very compact housing, easy to route; IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour; High performance with AIN substrate. Applications: Motor Drives, Power Generation.
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

V23990-P580-A46-PM is a flowPIM 1 3rd gen integrated power module for motor drives and power generation, combining a 3-phase rectifier, brake chopper, inverter, and NTC thermistor in a compact housing. It uses IGBT4 and EmCon4 technology with an AlN substrate for low losses and improved EMC. The inverter supports up to 1200 V blocking voltage and 35 A continuous collector current, with a maximum junction temperature of 175 °C. The rectifier block handles up to 1600 V reverse voltage and 50 A DC forward current per diode. The module features 4000 V isolation voltage, 12.7 mm creepage and clearance, and operates over a temperature range of -40 °C to +150 °C. It meets AEC-Q200 qualifications.

Datasheet Summary
Powered by GS/AI

V23990-P580-A46-PM is a flowPIM 1 3rd gen integrated power module for motor drives and power generation, combining a 3-phase rectifier, brake chopper, inverter, and NTC thermistor in a compact housing. It uses IGBT4 and EmCon4 technology with an AlN substrate for low losses and improved EMC. The inverter supports up to 1200 V blocking voltage and 35 A continuous collector current, with a maximum junction temperature of 175 °C. The rectifier block handles up to 1600 V reverse voltage and 50 A DC forward current per diode. The module features 4000 V isolation voltage, 12.7 mm creepage and clearance, and operates over a temperature range of -40 °C to +150 °C. It meets AEC-Q200 qualifications.

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - V23990P580A46PM - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
V23990P580A46PM
Power IGBT Transistor V23990P580A46PM
flowPIM 1 3rd gen, 1200V / 35A. Features: 3- rectifier, BRC, Inverter, NTC; Very compact housing, easy to route; IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour; High performance with AIN substrate. Applications: Motor Drives, Power Generation.

flowPIM 1 3rd gen, 1200V / 35A. Features: 3- rectifier, BRC, Inverter, NTC; Very compact housing, easy to route; IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour; High performance with AIN substrate. Applications: Motor Drives, Power Generation.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number V23990P580A46PM
Product Name Power IGBT Transistor
Package Type flow 1
Unlock Full Specs
to access all available technical data