Richardson RFPD Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 1200 V, 175 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero... | |
| 1200 V, 350 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero... | |
| 1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero... | |
| Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss , High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device... | |
| Flow Pim 0 3rd Generation used for motor drives | |
| Flowpim 2 3rd used for embedded generation | |
| flowPIM 2 3rd, 1200V/4A. | |
| Flowpim 3rd generation used for motor drives | |
| RF Power Vertical MOSFET. The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical Mosfet. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness. | |
| RF Power Vertical MOSFET. The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF161MP is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. | |
| The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. | |
| The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters... | |
| The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. | |
| The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. | |
| The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. | |
| The VRF2944 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. |
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