Richardson RFPD Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
1200 V, 175 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero...
1200 V, 350 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero...
1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero...
Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss , High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device...
Flow Pim 0 3rd Generation used for motor drives
Flowpim 2 3rd used for embedded generation
flowPIM 2 3rd, 1200V/4A.
Flowpim 3rd generation used for motor drives
RF Power Vertical MOSFET. The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Vertical MOSFET. The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Vertical MOSFET. The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Vertical MOSFET. The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Vertical MOSFET. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Vertical Mosfet. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness.
RF Power Vertical MOSFET. The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Vertical MOSFET. The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Vertical MOSFET. The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Vertical MOSFET. The VRF161MP is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Vertical MOSFET. The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters...
The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
The VRF2944 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.

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