NPN/NPN double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PEMT1
Features and benefits
Applications
TRANS 2NPN 40V 0.1A SOT666 Product overview: PEMX1,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 0.1A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PEMX1,115 can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 100mA 100MHz 300mW Surface Mount SOT-666
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 100mA 100MHz 300mW Surface Mount SOT-666
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 100mA 100MHz 300mW Surface Mount SOT-666
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1087505-PEMX1,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: 2 NPN (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-666
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 200mV @ 5mA, 50mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 1mA, 6V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon
Bipolar (BJT) Array Transistor, GENERAL PURPOSE, NPN, 40 V, 200 mW, 100 mA, 120, SOT-666 RoHS Compliant: Yes
TRANS 2NPN 40V 0.1A SOT666
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Rochester Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PEMX1,115 | 277-PEMX1,115 | 1727-1727-2-ND | 1087505-PEMX1,115 | PEMX1,115 | 38K6630 | PEMX1,115 |
| Product Name | NPN/NPN general purpose double transistor | 40V 0.1A Bipolar Transistor | Bipolar Transistor Arrays | TRANSISTORS - Transistors (BJT) - Arrays - PEMX1,115 | Bipolar (Bjt) Array Transistor, General Purpose, Npn, 40 V, 200 Mw, 100 Ma, 120, Sot-666 Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Package Type | SOT666 SOT666 | Tape & Reel (TR) | SOT-563, SOT-666 | SOT3; SOT-666 | SOT666 | TO-3 | |
| Polarity | NPN | NPN | NPN; 2 NPN (Dual) | NPN | NPN | ||
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||
| IC(max) | 100 milliamps | 100 milliamps | |||||
| VCEO | 40 volts | 40 volts |
