Nexperia B.V. NPN/PNP general purpose double transistor PEMZ7,315

Description
NPN/PNP low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD)plastic package. Features and benefits 300 mW total power dissipation Very small 1.6 x 1.2 mm ultra thin package Self alignment during soldering due to straight leads Low collector capacitance Low VCEsat High current capabilities Improved thermal behaviour due to flat leads Reduced required PCB area Reduced pick and place costs. Applications Heavy duty battery powered equipment (telecom and audio-video) such as lamp drivers VCEsat critical applications such as latest low supply voltage IC applications All battery driven equipment, to save battery power
Request a Quote Datasheet
Description
NPN/PNP low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD)plastic package. Features and benefits 300 mW total power dissipation Very small 1.6 x 1.2 mm ultra thin package Self alignment during soldering due to straight leads Low collector capacitance Low VCEsat High current capabilities Improved thermal behaviour due to flat leads Reduced required PCB area Reduced pick and place costs. Applications Heavy duty battery powered equipment (telecom and audio-video) such as lamp drivers VCEsat critical applications such as latest low supply voltage IC applications All battery driven equipment, to save battery power
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
NPN/PNP general purpose double transistor - PEMZ7,315 - Nexperia B.V.
Nijmegen, Netherlands
NPN/PNP general purpose double transistor
PEMZ7,315
NPN/PNP general purpose double transistor PEMZ7,315
NPN/PNP low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD)plastic package. Features and benefits 300 mW total power dissipation Very small 1.6 x 1.2 mm ultra thin package Self alignment during soldering due to straight leads Low collector capacitance Low VCEsat High current capabilities Improved thermal behaviour due to flat leads Reduced required PCB area Reduced pick and place costs. Applications Heavy duty battery powered equipment (telecom and audio-video) such as lamp drivers VCEsat critical applications such as latest low supply voltage IC applications All battery driven equipment, to save battery power

NPN/PNP low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD)plastic package.

Features and benefits

  • 300 mW total power dissipation
  • Very small 1.6 x 1.2 mm ultra thin package
  • Self alignment during soldering due to straight leads
  • Low collector capacitance
  • Low VCEsat
  • High current capabilities
  • Improved thermal behaviour due to flat leads
  • Reduced required PCB area
  • Reduced pick and place costs.

Applications

  • Heavy duty battery powered equipment (telecom and audio-video) such as lamp drivers
  • VCEsat critical applications such as latest low supply voltage IC applications
  • All battery driven equipment, to save battery power
Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-PEMZ7,315DKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PEMZ7,315DKR-ND
Bipolar Transistor Arrays 1727-PEMZ7,315DKR-ND
TRANS NPN/PNP 12V 500MA SOT-666

TRANS NPN/PNP 12V 500MA SOT-666

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-PEMZ7,315CT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PEMZ7,315CT-ND
Bipolar Transistor Arrays 1727-PEMZ7,315CT-ND
TRANS NPN/PNP 12V 500MA SOT-666

TRANS NPN/PNP 12V 500MA SOT-666

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-PEMZ7,315TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PEMZ7,315TR-ND
Bipolar Transistor Arrays 1727-PEMZ7,315TR-ND
Bipolar (BJT) Transistor Array NPN, PNP 12V 500mA 420MHz, 280MHz 300mW Surface Mount SOT-666

Bipolar (BJT) Transistor Array NPN, PNP 12V 500mA 420MHz, 280MHz 300mW Surface Mount SOT-666

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - 975573-PEMZ7,315 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays
975573-PEMZ7,315
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays 975573-PEMZ7,315
Win Source Part Number: 975573-PEMZ7,315 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Package: Tape & Reel (TR) Standard Package: 8,000 Mounting: SMD (SMT) Power - Max: 300mW Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 500mA Transistor Type: NPN, PNP Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Frequency - Transition: 420MHz, 280MHz Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666 Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: Nexperia USA Inc. Other Names: 934056714315 Base Product Number: PEMZ7 Product Status: Not For New Designs

Win Source Part Number: 975573-PEMZ7,315
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Package: Tape & Reel (TR)
Standard Package: 8,000
Mounting: SMD (SMT)
Power - Max: 300mW
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 500mA
Transistor Type: NPN, PNP
Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz, 280MHz
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: Nexperia USA Inc.
Other Names: 934056714315
Base Product Number: PEMZ7
Product Status: Not For New Designs

Buy Now Datasheet
Singapore, Singapore
12V 0.5A Bipolar Transistor
277-PEMZ7,315
12V 0.5A Bipolar Transistor 277-PEMZ7,315
TRANS NPN/PNP 12V 0.5A SOT666 Product overview: PEMZ7,315 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 0.5A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PEMZ7,315 can be used for catalog matching and distributor lookup.

TRANS NPN/PNP 12V 0.5A SOT666 Product overview: PEMZ7,315 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 0.5A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PEMZ7,315 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PEMZ7,315 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PEMZ7,315
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PEMZ7,315
TRANS NPN/PNP 12V 0.5A SOT666

TRANS NPN/PNP 12V 0.5A SOT666

Supplier's Site
Bipolar Transistor Arrays - PEMZ7,315 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
PEMZ7,315
Bipolar Transistor Arrays PEMZ7,315
TRANS NPN/PNP 12V 0.5A SOT666

TRANS NPN/PNP 12V 0.5A SOT666

Supplier's Site Datasheet
Transistor Array, Aec-Q101, Npn/pnp, 12V; Transistor Polarity Nexperia - 32AC8168 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Array, Aec-Q101, Npn/pnp, 12V; Transistor Polarity Nexperia
32AC8168
Transistor Array, Aec-Q101, Npn/pnp, 12V; Transistor Polarity Nexperia 32AC8168
TRANSISTOR ARRAY, AEC-Q101, NPN/PNP, 12V; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:12V; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-666; No. ofRoHS Compliant: Yes

TRANSISTOR ARRAY, AEC-Q101, NPN/PNP, 12V; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:12V; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-666; No. ofRoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number PEMZ7,315 1727-PEMZ7,315DKR-ND 975573-PEMZ7,315 277-PEMZ7,315 PEMZ7,315 PEMZ7,315 32AC8168
Product Name NPN/PNP general purpose double transistor Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays 12V 0.5A Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistor Arrays Transistor Array, Aec-Q101, Npn/pnp, 12V; Transistor Polarity Nexperia
Package Type SOT666 SOT666 SOT-563, SOT-666 SOT3 Tape & Reel (TR) SOT-563, SOT-666 TO-3
Polarity NPN; PNP NPN; PNP NPN; PNP NPN, PNP; NPN; PNP NPN; PNP
IC(max) 500 milliamps 500 milliamps 500 milliamps 500 milliamps
Power Gain 200 dB
Operating Frequency 420 to 280 MHz 420 to 280 MHz
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