NPN high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted package, rated for 40 V collector-emitter voltage and 15 A continuous collector current, with a peak collector current of 30 A for pulses up to 1 ms. The device operates with a maximum junction temperature of 175 °C and supports ambient temperatures from -55 °C to 175 °C. It has a collector-emitter saturation resistance of 28 to 40 mΩ under pulsed conditions at 15 A collector current and 1.5 A base current. Qualified to AEC-Q101 for automotive applications.
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT60415PY-Q
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Power Bipolar Transistors |
| Product Number | PHPT60415NY-QX |
| Product Name | 40 V, 15 A NPN high power bipolar transistor |
| VCEO | 40 volts |
