PNP high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted power plastic package, rated for a collector-emitter voltage of -40 V and a continuous collector current of -10 A, with a peak collector current of -20 A for pulses up to 1 ms. The device supports a maximum junction temperature of 175 °C and is qualified to AEC-Q101 for automotive applications. Thermal performance varies with PCB mounting: up to 25 W dissipation from junction to base, 5 W on ceramic PCB with standard footprint, 3.3 W on FR4 with 6 cm² collector pad, and 1.3 W on standard FR4. Base current is limited to -1 A continuous and -2 A pulsed.
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN complement: PHPT60410NY-Q
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Power Bipolar Transistors |
| Product Number | PHPT60410PY-QX |
| Product Name | 40 V, 10 A PNP high power bipolar transistor |
| VCEO | -40 volts |
