Nexperia B.V. Single FETs, MOSFETs PHD38N02LT,118

N-Channel 20V 44.7A (Tc) 57.6W (Tc) Surface Mount DPAK

MOSFET N-CH 20V 44.7A DPAK Product overview: PHD38N02LT,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 44.7A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 44.7A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PHD38N02LT,118 can be used for catalog matching and distributor lookup.

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 733372-PHD38N02LT,118
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 57.6W
Popularity: Low
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 44.7A
Rds On (Maximum) at Id, Vgs: 16mOhm at 25A, 5V
Gate Source Voltage(th) (Maximum) at Id: 1.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 15.1nC at 5V
Gate Source Voltage (Maximum): ±12V
Input Capacitance (Ciss) (Maximum) at Vds: 800pF at 20V