Nexperia B.V. 50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTD123ET,215

Description
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123ET Features and benefits Built-in bias resistors Simplifies circuit design 500 mA output current capability Reduces component count Reduces pick and place costs ± 10 % resistor ratio tolerance AEC-Q101 qualified Applications Digital application in automotive and industrial segments Controlling IC inputs Cost-saving alternative to BC817 series in digital applications Switching loads
Request a Quote Datasheet
Description
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123ET Features and benefits Built-in bias resistors Simplifies circuit design 500 mA output current capability Reduces component count Reduces pick and place costs ± 10 % resistor ratio tolerance AEC-Q101 qualified Applications Digital application in automotive and industrial segments Controlling IC inputs Cost-saving alternative to BC817 series in digital applications Switching loads
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ - PDTD123ET,215 - Nexperia B.V.
Nijmegen, Netherlands
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTD123ET,215
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTD123ET,215
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123ET Features and benefits Built-in bias resistors Simplifies circuit design 500 mA output current capability Reduces component count Reduces pick and place costs ± 10 % resistor ratio tolerance AEC-Q101 qualified Applications Digital application in automotive and industrial segments Controlling IC inputs Cost-saving alternative to BC817 series in digital applications Switching loads

NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.

PNP complement: PDTB123ET

Features and benefits

  • Built-in bias resistors
  • Simplifies circuit design
  • 500 mA output current capability
  • Reduces component count
  • Reduces pick and place costs
  • ± 10 % resistor ratio tolerance
  • AEC-Q101 qualified

Applications

  • Digital application in automotive and industrial segments
  • Controlling IC inputs
  • Cost-saving alternative to BC817 series in digital applications
  • Switching loads
Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTD123ET,215 - 791618-PDTD123ET,215 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTD123ET,215
791618-PDTD123ET,215
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTD123ET,215 791618-PDTD123ET,215
Manufacturer: Nexperia USA Inc. Win Source Part Number: 791618-PDTD123ET,215 Packaging: Reel package Package: TO-236-3, SC-59, SOT-23-3 Mounting: SMD Power - Max: 250mW Transistor Type: NPN - Pre-Biased Family Name: PDTD123ET Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k Categories: Discrete Semiconductor Products Manufacturer Package: TO-236AB (SOT23) Current - Collector (Ic) (Maximum): 500mA Voltage - Collector Emitter Breakdown (Maximum): 50V Vce Saturation (Maximum) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Maximum): 500nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 40 @ 50mA, 5V Alternative Parts (Cross-Reference): DTD123TCT116; DTD123ECT116; DTD114GCT116; DTD123EKFRAT146; Introduction Date: April 08, 2005 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 791618-PDTD123ET,215
Packaging: Reel package
Package: TO-236-3, SC-59, SOT-23-3
Mounting: SMD
Power - Max: 250mW
Transistor Type: NPN - Pre-Biased
Family Name: PDTD123ET
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-236AB (SOT23)
Current - Collector (Ic) (Maximum): 500mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Vce Saturation (Maximum) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Maximum): 500nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 40 @ 50mA, 5V
Alternative Parts (Cross-Reference): DTD123TCT116; DTD123ECT116; DTD114GCT116; DTD123EKFRAT146;
Introduction Date: April 08, 2005
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-5141-2-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-5141-2-ND
Single, Pre-Biased Bipolar Transistors 1727-5141-2-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 250mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 250mW Surface Mount TO-236AB

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-5141-6-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-5141-6-ND
Single, Pre-Biased Bipolar Transistors 1727-5141-6-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 250mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 250mW Surface Mount TO-236AB

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-5141-1-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-5141-1-ND
Single, Pre-Biased Bipolar Transistors 1727-5141-1-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 250mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 250mW Surface Mount TO-236AB

Buy Now Datasheet
Singapore, Singapore
Automotive 50V 500mA 250mW Bipolar Transistor
292-PDTD123ET,215
Automotive 50V 500mA 250mW Bipolar Transistor 292-PDTD123ET,215
Trans Digital BJT NPN 50V 500mA 250mW Automotive 3-Pin SOT-23 T/R Product overview: PDTD123ET,215 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 50V, 500mA, 250mW, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, Automotive, 50V, 500mA, 250mW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTD123ET,215 can be used for catalog matching and distributor lookup.

Trans Digital BJT NPN 50V 500mA 250mW Automotive 3-Pin SOT-23 T/R Product overview: PDTD123ET,215 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 50V, 500mA, 250mW, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, Automotive, 50V, 500mA, 250mW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTD123ET,215 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - PDTD123ET,215 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PDTD123ET,215 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PDTD123ET,215
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PDTD123ET,215
TRANS PREBIAS NPN 50V TO236AB

TRANS PREBIAS NPN 50V TO236AB

Supplier's Site
Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 500 Ma, 2.2 Kohm, 2.2 Kohm, 1, Sot-23 Rohs Compliant Nexperia - 93X4591 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 500 Ma, 2.2 Kohm, 2.2 Kohm, 1, Sot-23 Rohs Compliant Nexperia
93X4591
Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 500 Ma, 2.2 Kohm, 2.2 Kohm, 1, Sot-23 Rohs Compliant Nexperia 93X4591
Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 500 mA, 2.2 kohm, 2.2 kohm, 1, SOT-23 RoHS Compliant: Yes

Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 500 mA, 2.2 kohm, 2.2 kohm, 1, SOT-23 RoHS Compliant: Yes

Supplier's Site
Single, Pre-Biased Bipolar Transistors - PDTD123ET,215 - ODG (Origin Data Global)
Shenzhen, China
Single, Pre-Biased Bipolar Transistors
PDTD123ET,215
Single, Pre-Biased Bipolar Transistors PDTD123ET,215
TRANS PREBIAS NPN 50V TO236AB

TRANS PREBIAS NPN 50V TO236AB

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company ODG (Origin Data Global)
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PDTD123ET,215 791618-PDTD123ET,215 1727-5141-2-ND 292-PDTD123ET,215 PDTD123ET,215 PDTD123ET,215 93X4591 PDTD123ET,215
Product Name 50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTD123ET,215 Single, Pre-Biased Bipolar Transistors Automotive 50V 500mA 250mW Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 500 Ma, 2.2 Kohm, 2.2 Kohm, 1, Sot-23 Rohs Compliant Nexperia Single, Pre-Biased Bipolar Transistors
Package Type SOT23; SOT23 SOT23 SOT3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23 Automotive TO-3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
Transistor Grade / Operating Range Industrial; Automotive Automotive
Polarity NPN NPN NPN NPN - Pre-Biased; NPN
Packing Method Tape Reel; Reel package Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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