Nexperia B.V. 50 V, 100 mA PNP/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open PEMB3,115

Description
PNP/PNP Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD6 NPN/NPN complement: PEMH7 Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Low current peripheral driver Controlling IC inputs Replaces general-purpose transistors in digital applications
Request a Quote Datasheet
Description
PNP/PNP Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD6 NPN/NPN complement: PEMH7 Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Low current peripheral driver Controlling IC inputs Replaces general-purpose transistors in digital applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
50 V, 100 mA PNP/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open - PEMB3,115 - Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA PNP/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open
PEMB3,115
50 V, 100 mA PNP/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open PEMB3,115
PNP/PNP Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD6 NPN/NPN complement: PEMH7 Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Low current peripheral driver Controlling IC inputs Replaces general-purpose transistors in digital applications

PNP/PNP Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PEMD6

NPN/NPN complement: PEMH7

Features and benefits

  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs

Applications

  • Low current peripheral driver
  • Controlling IC inputs
  • Replaces general-purpose transistors in digital applications
Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - PEMB3,115-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
PEMB3,115-ND
Bipolar Transistor Arrays, Pre-Biased PEMB3,115-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Buy Now Datasheet
 - PEMB3,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

Supplier's Site Datasheet
Singapore
4.7 kOhm Bipolar Transistor
293-PEMB3,115
4.7 kOhm Bipolar Transistor 293-PEMB3,115
PEMB3; PUMB3 - PNP/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open SOT 6-Pin Product overview: PEMB3,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.7 kOhm. Search-friendly keywords include transistor, BJT, switching, amplification, 4.7 kOhm, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PEMB3,115 can be used for catalog matching and distributor lookup.

PEMB3; PUMB3 - PNP/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open SOT 6-Pin Product overview: PEMB3,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.7 kOhm. Search-friendly keywords include transistor, BJT, switching, amplification, 4.7 kOhm, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PEMB3,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PEMB3,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PEMB3,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PEMB3,115
TRANS PREBIAS 2PNP 50V SOT666

TRANS PREBIAS 2PNP 50V SOT666

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PEMB3,115 PEMB3,115-ND PEMB3,115 293-PEMB3,115 PEMB3,115
Product Name 50 V, 100 mA PNP/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open Bipolar Transistor Arrays, Pre-Biased 4.7 kOhm Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP
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