NPN high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted plastic package, rated for 60 V collector-emitter voltage and 6 A continuous collector current, with a peak collector current of 14 A for single pulses. Junction temperature operates up to 175 °C. Total power dissipation reaches 25 W when mounted for direct junction-to-base heat transfer. Qualified to AEC-Q101 for automotive applications. Collector-emitter saturation resistance is 34 to 45 mΩ at 6 A collector current and 600 mA base current, pulsed conditions.
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT60606PY-Q
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Power Bipolar Transistors |
| Product Number | PHPT60606NY-QX |
| Product Name | 60 V, 6 A NPN high power bipolar transistor |
| VCEO | 60 volts |
