40 V, 6 A NPN high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted plastic package, qualified for automotive applications per AEC-Q101 and rated for junction temperatures up to 175 °C. Maximum collector current is 6 A with a peak pulse current of 14 A. Collector-emitter saturation resistance is 45 to 60 mΩ at 6 A collector current and 600 mA base current. Thermal resistance from junction to ambient ranges from 30 K/W on a ceramic PCB to 111 K/W on a standard FR4 PCB with standard footprint. Package dimensions follow SOT669 specifications with a mounting base for enhanced thermal performance.
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT60406PY-Q
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Power Bipolar Transistors |
| Product Number | PHPT60406NY-QX |
| Product Name | 40 V, 6 A NPN high power bipolar transistor |
| VCEO | 40 volts |
