Nexperia B.V. Bipolar Transistor Arrays, Pre-Biased PEMB4,115

Dual PNP resistor-equipped transistor featuring integrated 10 kΩ input bias resistors and open R2 resistors, packaged in SOT666 surface-mount format. Each transistor supports a maximum collector-emitter voltage of -50 V and a continuous output current of -100 mA, with a total power dissipation of 300 mW per device. The device offers a DC current gain (hFE) of at least 200 at -1 mA collector current and a collector-emitter saturation voltage of up to 150 mV. Operating ambient temperature ranges from -65 °C to +150 °C, and the junction temperature rating is 150 °C. Reflow soldering is the only recommended soldering method. The package is compliant with EIAJ SC-88 equivalent standards.