40 V, 10 A NPN high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted plastic package with a maximum junction temperature of 175 °C and a peak collector current of 20 A for pulses up to 1 ms. The device is qualified to AEC-Q101 and designed for automotive applications. Collector-emitter saturation resistance is 28 to 40 mΩ at 10 A collector current and 1 A base current. Total power dissipation reaches 25 W when mounted for junction-to-base heat transfer. Applications include power management, load switching, motor drive, and relay replacement.
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT60410PY-Q
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Power Bipolar Transistors |
| Product Number | PHPT60410NY-QX |
| Product Name | 40 V, 10 A NPN high power bipolar transistor |
| VCEO | 40 volts |
