Nexperia B.V. 50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ PEMB10,115

Description
PNP/PNP double Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD10 NPN/NPN complement: PEMH10 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Low current peripheral driver Controlling IC inputs Replaces general-purpose transistors in digital applications
Request a Quote Datasheet
Description
PNP/PNP double Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD10 NPN/NPN complement: PEMH10 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Low current peripheral driver Controlling IC inputs Replaces general-purpose transistors in digital applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ - PEMB10,115 - Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
PEMB10,115
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ PEMB10,115
PNP/PNP double Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD10 NPN/NPN complement: PEMH10 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Low current peripheral driver Controlling IC inputs Replaces general-purpose transistors in digital applications

PNP/PNP double Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PEMD10

NPN/NPN complement: PEMH10

Features and benefits

  • 100 mA output current capability
  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs

Applications

  • Low current peripheral driver
  • Controlling IC inputs
  • Replaces general-purpose transistors in digital applications
Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-7359-1-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-7359-1-ND
Bipolar Transistor Arrays, Pre-Biased 1727-7359-1-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-7359-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-7359-2-ND
Bipolar Transistor Arrays, Pre-Biased 1727-7359-2-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-7359-6-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-7359-6-ND
Bipolar Transistor Arrays, Pre-Biased 1727-7359-6-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMB10,115 - 1087470-PEMB10,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMB10,115
1087470-PEMB10,115
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMB10,115 1087470-PEMB10,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1087470-PEMB10,115 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-666 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 100mV @ 250μA, 5mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 100 @ 10mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1087470-PEMB10,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-666
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 100mV @ 250μA, 5mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 100 @ 10mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor 293-PEMB10,115
PEMB10; PUMB10 - PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ SOT 6-Pin Product overview: PEMB10,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PEMB10,115 can be used for catalog matching and distributor lookup.

PEMB10; PUMB10 - PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ SOT 6-Pin Product overview: PEMB10,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PEMB10,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - PEMB10,115 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
PEMB10,115
Bipolar Transistor Arrays, Pre-Biased PEMB10,115
TRANS PREBIAS 2PNP 50V SOT666

TRANS PREBIAS 2PNP 50V SOT666

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PEMB10,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PEMB10,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PEMB10,115
TRANS PREBIAS 2PNP 50V SOT666

TRANS PREBIAS 2PNP 50V SOT666

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PEMB10,115 1727-7359-1-ND 1087470-PEMB10,115 293-PEMB10,115 PEMB10,115 PEMB10,115
Product Name 50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMB10,115 Bipolar Transistor Bipolar Transistor Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT666 SOT666 SOT-563, SOT-666 SOT3; SOT-666 SOT-563, SOT-666 AEC-Q101
Polarity PNP PNP; 2 PNP - Pre-Biased (Dual) 2 PNP Pre-Biased (Dual); PNP
Transistor Grade / Operating Range Automotive
IC(max) 100 milliamps 100 milliamps
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