Nexperia B.V. 50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ PEMB10,115

PNP/PNP double Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PEMD10

NPN/NPN complement: PEMH10

Features and benefits

• 100 mA output current capability
• Built-in bias resistors
• Simplifies circuit design
• Reduces component count
• Reduces pick and place costs

Applications

• Low current peripheral driver
• Controlling IC inputs
• Replaces general-purpose transistors in digital applications

PEMB10; PUMB10 - PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ SOT 6-Pin Product overview: PEMB10,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PEMB10,115 can be used for catalog matching and distributor lookup.

Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1087470-PEMB10,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-666
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 100mV @ 250μA, 5mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 100 @ 10mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance