Nexperia B.V. 40 V, 6 A PNP high power bipolar transistor PHPT60406PY-QX

Description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60406NY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement
  • 40 V, 6 A PNP high power bipolar transistor - PHPT60406PY-QX - Nexperia B.V.
    Nexperia B.V.
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Description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60406NY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement
Request a Quote
Datasheet
Datasheet Summary
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PNP high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted power plastic package, rated for a Collector-Emitter Voltage of -40 V and a Collector Current of -6 A, with a peak pulsed collector current of -12 A and a collector-emitter saturation resistance of 58 to 78 mΩ under specified conditions. The device supports operation up to a junction temperature of 175 °C and is qualified to AEC-Q101 for automotive applications.

Datasheet Summary
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PNP high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted power plastic package, rated for a Collector-Emitter Voltage of -40 V and a Collector Current of -6 A, with a peak pulsed collector current of -12 A and a collector-emitter saturation resistance of 58 to 78 mΩ under specified conditions. The device supports operation up to a junction temperature of 175 °C and is qualified to AEC-Q101 for automotive applications.

Suppliers

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40 V, 6 A PNP high power bipolar transistor - PHPT60406PY-QX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
40 V, 6 A PNP high power bipolar transistor
PHPT60406PY-QX
40 V, 6 A PNP high power bipolar transistor PHPT60406PY-QX
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60406NY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

NPN complement: PHPT60406NY-Q

Features and benefits

  • High thermal power dissipation capability
  • Suitable for high temperature applications up to 175 °C
  • Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
  • High energy efficiency due to less heat generation
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Power management
  • Load switch
  • Linear mode voltage regulator
  • Backlighting applications
  • Motor drive
  • Relay replacement
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Power Bipolar Transistors
Product Number PHPT60406PY-QX
Product Name 40 V, 6 A PNP high power bipolar transistor
VCEO -40 volts
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