Nexperia B.V. Bipolar Transistor Arrays, Pre-Biased PEMB30,115

Description
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
Request a Quote Datasheet

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Product
Description
Supplier Links
Bipolar Transistor Arrays, Pre-Biased - PEMB30,115-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
PEMB30,115-ND
Bipolar Transistor Arrays, Pre-Biased PEMB30,115-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMB30,115 - 1087474-PEMB30,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMB30,115
1087474-PEMB30,115
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMB30,115 1087474-PEMB30,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1087474-PEMB30,115 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 2.2k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-666 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 150mV @ 500μA, 10mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 30 @ 20mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1087474-PEMB30,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 2.2k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-666
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 30 @ 20mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PEMB30,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PEMB30,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PEMB30,115
TRANS PREBIAS 2PNP 50V SOT666

TRANS PREBIAS 2PNP 50V SOT666

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number PEMB30,115-ND 1087474-PEMB30,115 PEMB30,115
Product Name Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMB30,115 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; 2 PNP - Pre-Biased (Dual)
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