PNP high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted plastic package, rated for a collector-emitter voltage of -40 V and a continuous collector current of -15 A, with a peak pulse collector current of -30 A. The device has a collector-emitter saturation resistance of 25 to 57 mΩ under specified pulsed conditions and can operate with a junction temperature up to 175 °C. It is qualified to AEC-Q101 and suitable for automotive applications. Thermal power dissipation up to 25 W is achievable with proper mounting. NPN complement: PHPT60415NY-Q.
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN complement: PHPT60415NY-Q
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Power Bipolar Transistors |
| Product Number | PHPT60415PY-QX |
| Product Name | 40 V, 15 A PNP high power bipolar transistor |
| VCEO | -40 volts |
